MOSFET N-CH 200V 9.4A DPAK
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Features: · Avalanche Rugged Technology· Rugged Gate Oxide Technology· Lower Input Capacitance· Im...
Application Surface Mount (IRFR120N)Straight Lead (IRFU120N)Advanced Process Technology Fast Switc...
| Parameter | Max. | Units | |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | 9.4 | A |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | 6.7 | |
| IDM | Pulsed Drain Current | 38 | |
| PD @TC = 25°C | Power Dissipation | 86 | W |
| Linear Derating Factor | 0.57 | W/°C | |
| VGS | Gate-to-Source Voltage | ± 30 | V |
| dv/dt | Peak Diode Recovery dv/dt | 5.0 | V/ns |
| TJ TSTG |
Operating Junction and Storage Temperature Range | -55 to + 175 | °C |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) |
| Technical/Catalog Information | IRFR9N20D |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25° C | 9.4A |
| Rds On (Max) @ Id, Vgs | 380 mOhm @ 5.6A, 10V |
| Input Capacitance (Ciss) @ Vds | 560pF @ 25V |
| Power - Max | 86W |
| Packaging | Bulk |
| Gate Charge (Qg) @ Vgs | 27nC @ 10V |
| Package / Case | DPak,SC-63,TO-252 (2 leads+tab) |
| FET Feature | Standard |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | IRFR9N20D IRFR9N20D |