MOSFET N-CH 200V 31A TO-262
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Parameter | Max. | Units | |
ID @ TC = 25 | Continuous Drain Current, VGS @ 10V | 31 | A |
ID @ TC = 100 | Continuous Drain Current, VGS @ 10V | 21 | |
IDM | Pulsed Drain Current | 124 | |
PD @TA = 25 | Power Dissipation | 3.1 | W |
PD @TC = 25 | Power Dissipation | 200 | |
Linear Derating Factor | 1.3 | W/ | |
VGS | Gate-to-Source Voltage | ± 30 | V |
dv/dt | Peak Diode Recovery dv/dt | 2.1 | V/ns |
TJ | Operating Junction and | -55 to + 175 | |
TSTG | Storage Temperature Range | ||
Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) | ||
Mounting torqe, 6-32 or M3 screw | 10 lbf`in (1.1N`m) |
Technical/Catalog Information | IRFSL31N20DPBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25° C | 31A |
Rds On (Max) @ Id, Vgs | 82 mOhm @ 18A, 10V |
Input Capacitance (Ciss) @ Vds | 2370pF @ 25V |
Power - Max | 3.1W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 107nC @ 10V |
Package / Case | TO-262-3 (Straight Leads) |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRFSL31N20DPBF IRFSL31N20DPBF |