IRG4IBC30SPBF

Gate-Emitter Leakage Current :
Maximum Operating Temperature :
Collector- Emitter Voltage VCEO Max : 600 V
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : TO-220FP
Collector-Emitter Saturation Voltage : 1.6 V
Power Dissipation : 45 W
Continuous Collector Current at 25 C : 23.5 A


Features:

• Standard: Optimized for minimum saturation voltage and low operating freqencies (<1 kHz)
• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation
• Industry standard TO-220 Full-Pak
• Lead-Free


Specifications

	Parameter	Max.	Units
VES	Collector-to-Emitter Breakdown Voltage	600	V
IC @ TC= 25	Continuous Collector Current	23.5	A
IC @ TC = 70	Continuous Collector Current	13.0
ICM	Pulsed Collector Current	68
ILM	Clamped Inductive Load Current	68
VGE	Gate-to-Emitter Voltage	± 20	V
EARV	Reverse Voltage Avalanche Energy	10	mJ
PD @ TC = 25	Maximum Power Dissipation	45	W
PD @ TC = 70	Maximum Power Dissipation	18
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 150
	Soldering Temperature, for 10 seconds	300 (0.063 in. (1.6mm) from case)

Parameters:

Technical/Catalog Information	IRG4IBC30SPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	23.5A
Vce(on) (Max) @ Vge, Ic	1.6V @ 15V, 18A
Power - Max	45W
Mounting Type	Through Hole
Package / Case	TO-220-3 Fullpak (Straight Leads)
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRG4IBC30SPBF IRG4IBC30SPBF