IRGIB7B60KD Selling Leads, Price trend, IRGIB7B60KD DataSheet download, circuit diagram from SeekIC.com

Features: • Low VCE (on) Non Punch Through IGBT Technology.• 10s Short Circuit Capability.• Square RBSOA.• Positive VCE (on) Temperature Coefficient.• Maximum Junction Temperature rated at 175°C.Specifications Parameter Max. Units VCES Collector-to-...

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SeekIC No. : 004377841 Detail

IRGIB7B60KD: Features: • Low VCE (on) Non Punch Through IGBT Technology.• 10s Short Circuit Capability.• Square RBSOA.• Positive VCE (on) Temperature Coefficient.• Maximum Junction ...

IRGIB7B60KD Data Sheet

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Part Number:: IRGIB7B60KD
Supply Ability:: 5000

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IGBT Transistors 600V Low-Vceon

Product Details

Description

Features:

• Low V_{CE (on)} Non Punch Through IGBT Technology.
• 10s Short Circuit Capability.
• Square RBSOA.
• Positive V_{CE (on)} Temperature Coefficient.
• Maximum Junction Temperature rated at 175°C.

Specifications

	Parameter	Max.	Units
V_CES	Collector-to-Emitter Voltage	600	V
I_D @T_C = 25°C	Continuous Drain Current	12	A
I_D @T_C = 100°C	Continuous Drain Current	8.0
I_CM	Pulse Collector Current (Ref.Fig.C.T.5)	24
I_LM	Clamped Inductive Load current	24
I_F @ T_C= 25°C	Diode Continuous Forward Current	9.0
I_F@ T_C=100°C	Diode Continuous Forward Current	6.0
I_FM	Diode Maximum Forward Current	18
V_ISOL	RMS Isolation Voltage, Terminal to Case, t=1 min	2500	V
V_GE	Gate-to-Emitter Voltage	±20	V
P_D @T_C = 25°C	Maximum Power Dissipation	39	W
P_D @ T_C =100°C	Maximum Power Dissipation	20	W
T_JT_STG	Operating Junction and Storage Temperature Range	-55 to + 175	°C
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )	°C
	Mounting Torque, 6-32 or M3 Screw	10 lbf•in (1.1 N•m)

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