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IRGIB7B60KD

Features: • Low VCE (on) Non Punch Through IGBT Technology.• 10s Short Circuit Capability.• Square RBSOA.• Positive VCE (on) Temperature Coefficient.• Maximum Junction Temperature rated at 175°C.Specifications Parameter Max. Units VCES Collector-to-...

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IRGIB7B60KD: Features: • Low VCE (on) Non Punch Through IGBT Technology.• 10s Short Circuit Capability.• Square RBSOA.• Positive VCE (on) Temperature Coefficient.• Maximum Junction ...

IRGIB7B60KD Data Sheet

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Part Number:
IRGIB7B60KD
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low VCE (on) Non Punch Through IGBT Technology.
• 10s Short Circuit Capability.
• Square RBSOA.
• Positive VCE (on) Temperature Coefficient.
• Maximum Junction Temperature rated at 175°C.




Specifications

Parameter
Max.
Units
VCES Collector-to-Emitter Voltage
600
V
ID @TC = 25°C Continuous Drain Current
12
A
ID @TC = 100°C Continuous Drain Current
8.0
ICM Pulse Collector Current (Ref.Fig.C.T.5)
24
ILM Clamped Inductive Load current
24
IF @ TC = 25°C Diode Continuous Forward Current
9.0
IF @ TC =100°C Diode Continuous Forward Current
6.0
IFM Diode Maximum Forward Current
18
VISOL RMS Isolation Voltage, Terminal to Case, t=1 min
2500
V
VGE Gate-to-Emitter Voltage
±20
PD @TC = 25°C Maximum Power Dissipation
39
W
PD @ TC =100°C Maximum Power Dissipation
20
TJ
TSTG		 Operating Junction and
Storage Temperature Range
-55 to + 175
°C
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
Mounting Torque, 6-32 or M3 Screw
10 lbf•in (1.1 N•m)





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