MFG:IR Package Cooled:TO-254AA D/C:05+
MFG: IR
Package Cooled: TO-254AA
D/C: 05+
Description: Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current den...
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.They provide substantial benefits to a host of high-voltage, high-current applications.
The performance of various IGBTs varies greatly with frequency. Note that IR now provides the designer with a speed benchmark (fIc/2, or the "half-current frequency "),as well as an indication of the current handling capability of the device.
|
Parameter |
Max. |
Units | |
| VCES | Collector-to-Emitter Voltage |
1200 |
V |
| IC @ TC = 25°C | Continuous Collector Current |
13 |
A |
| IC @ TC = 100°C | Continuous Collector Current |
48 | |
| ICM | Pulsed Collector Current |
24 | |
| ILM | Clamped Inductive Load Current |
48 | |
| VGE | Gate-to-Emitter Voltage |
±20 |
V |
| PD @ TC = 25°C | Maximum Power Dissipation |
96 |
W |
| PD @ TC = 100°C | Maximum Power Dissipation |
96 | |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 150 |
°C
|
| Lead Temperature |
300 (0.063 in. (1.6mm) from case) | ||
| Weight |
9.3 (typical) |
g |
IRGMH40F
PDF/DataSheet Download
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier IRGMC50U have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.The IRGMC50U...
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier IRGMC50F have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.The IRGMC50F...
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier IRGMC40Uhave higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.The IRGMC40Up...
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier IRGMC40F have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.The IRGMC40F...
The IRGMC30U is a kind of insulated gate bipolar transistors (IGBTs) from international rectifier which have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar po...
The IRGMC30F is a kind of insulated gate bipolar transistors (IGBTs) from international rectifier which have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar po...
Price: 0.42-0.56 USD
TO3P, toshiba transistor, silicon NPN, triple diffused MESA type, 1500 V, 0.15 μs
Price: 0.01-100 USD
large capacitance, aluminum electrolytic capacitor, 160 to 450Vdc, 470uF
Price: 0.1-0.5 USD
Triple 2-channel, analogue multiplexer, PHILIPS, -18 to + 0.5 V Supply voltage
Price: 0.01-100 USD
CM05CG1R0C50AH, AVX Corporation, Capacitor
Price: 3.34-3.54 USD
Power Relay, 8.96 mA, High-sensitivity, High-capacity, Various Model
Price: 0.1-2 USD
IC, SOP-16, 10 mA
Price: 0.8-1 USD
Bus Termination Regulator, 8-SOIC, -5 to +5 mV, 0.5 to 1 mA, Small package, Low cost
Price: 3-3.5 USD
1115R1B, QFP-48, Philips Electronics India Limited
Price: 0.1-0.1 USD
VME2000P-45, DIP, PLX Technology
Price: 5.5-5.85 USD
monolithic electrometer operational amplifier, ±18 V, 500 mW, Low offset voltage
Price: 10-35 USD
power transistor module, 600V, 1380W, 150A, free wheeling diode, high DC current gain, insulated t...
Price: 0.001-0.002 USD
ceramic capacitor, general use SMD, Low residual inductance, High-accuracy
