MFG:IR Package Cooled:TO-259AA D/C:05+
MFG: IR
Package Cooled: TO-259AA
D/C: 05+
Description: Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current den...
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.They provide substantial benefits to a host of high-voltage, high-current applications.
The performance of various IGBTs varies greatly with frequency. Note that IR now provides the designer with a speed benchmark (fIc/2, or the "half-current frequency "),as well as an indication of the current handling capability
|
Parameter |
Max. |
Units | |
| VCES | Collector-to-Emitter Voltage |
600 |
V |
| IC @ TC = 25°C | Continuous Collector Current |
45* |
A |
| IC @ TC = 100°C | Continuous Collector Current |
27 | |
| ICM | Pulsed Collector Current |
220 | |
| ILM | Clamped Inductive Load Current |
180 | |
| VGE | Gate-to-Emitter Voltage |
±20 |
V |
| PD @ TC = 25°C | Maximum Power Dissipation |
200 |
W |
| PD @ TC = 100°C | Maximum Power Dissipation |
80 | |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 150 |
°C
|
| Lead Temperature |
300 (0.063 in. (1.6mm) from case) | ||
| Weight |
10.5 (typical) |
g |
IRGMIC50U
PDF/DataSheet Download
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