IRGPS60B120KDP

Gate-Emitter Leakage Current :
Maximum Operating Temperature :
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Continuous Collector Current at 25 C : 120 A
Collector-Emitter Saturation Voltage : 2.75 V
Collector- Emitter Voltage VCEO Max : 1.2 KV
Package / Case : TO-274AA
Power Dissipation : 595 W


Features:

• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10s Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
• Super-247 Package.
• Lead-Free


Specifications

	Parameter	Max.	Units
VCES	Collector-to-Emitter Voltage	1200	V
IC @ TC =25	Continuous Collector Current	105	A
IC @ TC=100	Continuous Collector Current	60
ICM	Pulsed Collector Current	240
ILM	Clamped Inductive Load Current	240
IF @ TC =25	Diode Continuous Forward Current	120
IF @ TC=100	Diode Continuous Forward Current	60
IFM	Diode Maximum Forward Current	240
VGE	Gate-to-Emitter Voltage	± 20	V
PD @ TC =25	Maximum Power Dissipation	595	W
PD @ TC=100	Maximum Power Dissipation	238
TJ,TSTG	Operating Junction and Storage Temperature Range	-55 to +150
	Soldering Temperature, for 10 sec.	300 (0.063 in. (1.6mm) from case)

Parameters:

Technical/Catalog Information	IRGPS60B120KDP
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	105A
Vce(on) (Max) @ Vge, Ic	2.75V @ 15V, 60A
Power - Max	595W
Mounting Type	Through Hole
Package / Case	Super-247-3 (Straight Leads)
Packaging	Bag
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRGPS60B120KDP IRGPS60B120KDP