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Part Number: IRLL110

 

 

Package Cooled: T0223

 

Description: Third Generation HEXFETs from International Rectifier provide the designer with the best combination o...


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IRLL110 General Description


Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pick-andplace as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of grreater than 1.25W is possible in a typical surface mount application.

IRLL110 Maximum Ratings

  Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 1.5 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 0.93  
IDM Pulsed Drain Current 12  
PD @Tc = 25°C Power Dissipation 3.1  
PD @TC = 25°C Power Dissipation (PCB Mount)** 2.0 W
  Linear Derating Factor 0.025 W/°C
  Linear Derating Factor (PCB Mount)** 0.017  
VGS Gate-to-Source Voltage -/+10 V
EAS Single Pulse Avalanche Energy 50 mJ
IAR Avalanche Current 1.5 A
EAR Repetitive Avalanche Energy 0.31 mJ
dv/dt Peak Diode Recovery dv/dt 5.5 V/ns
TJ TSTG Junction and Storage Tempera

IRLL110 datasheet

IRLL110
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