Purchase IS41LV8200, In-stock IS41LV8200 From SeekIC.


Part Number: IS41LV8200
Description: The ISSI IS41C8200 and IS41LV8200 are 2,097,152 x 8-bit highperformance CMOS Dynamic Random Access Mem...


Description: The ISSI IS41C8200 and IS41LV8200 are 2,097,152 x 8-bit highperformance CMOS Dynamic Random Access Mem...
The ISSI IS41C8200 and IS41LV8200 are 2,097,152 x 8-bit highperformance CMOS Dynamic Random Access Memory. These devices offer an accelarated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20 ns per 4-bit word.
These features make the IS41C8200 and IS41LV8200 ideally suited for high-bandwidth graphics, digital signal processing, high-performance computing systems, and peripheral applications.
The IS41C8200 and IS41LV8200 are packaged in 28-pin 300-mil SOJ with JEDEC standard pinouts.
|
Symbol |
Parameters |
Rating |
Unit |
|
VT |
Voltage on Any Pin Relative to GND 5V 3.3V |
1.0 to +7.0 0.5 to +4.6 |
V |
|
VCC |
Supply Voltage 5V 3.3V |
1.0 to +7.0 0.5 to +4.6 |
V |
|
IOUT |
Output Current |
50 |
mA |
|
PD |
Power Dissipation |
1 |
W |
|
TA |
Commercial Operation Temperature Industrial Operation Temperature |
0 to +70 -40 to +85 |
|
|
TSTG |
Storage Temperature |
55 to +125 |
IS41LV8200
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