Purchase IS41LV8205, In-stock IS41LV8205 From SeekIC.
Part Number: IS41LV8205
Description: The ISSI IS41C8205 and IS41LV8205 are 2,097,152 x 8-bit highperformance CMOS Dynamic Random Access Mem...
- Table of contents:
IS41LV8205
-
Suppliers
DataSheet
General Description
IS41LV8205 General Description
The ISSI IS41C8205 and IS41LV8205 are 2,097,152 x 8-bit highperformance CMOS Dynamic Random Access Memory.
The Fast Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20 ns per 4-bit word.
These features make the IS41C8205 and IS41LV8205 ideally suited for high-bandwidth graphics, digital signal processing, high-performance computing systems, and peripheral applications.
The IS41C8205 and IS41LV8205 are packaged in 28-pin 300-mil SOJ and 28-pin TSOP (Type II) with JEDEC standard pinouts.
IS41LV8205 Maximum Ratings
|
Symbol |
Parameters |
Rating |
Unit |
|
VT |
Voltage on Any Pin Relative to GND 5V 3.3V |
1.0 to +7.0 0.5 to +4.6 |
V |
|
VCC |
Supply Voltage 5V 3.3V |
1.0 to +7.0 0.5 to +4.6 |
V |
|
IOUT |
Output Current |
50 |
mA |
|
PD |
Power Dissipation |
1 |
W |
|
TA |
Commercial Operation Temperature Industrial Temperature |
0 to +70 40 to +85 |
|
|
TSTG |
Storage Temperature |
55 to +125 |
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
IS41LV8205 Features
• Fast Page Mode Access Cycle
• TTL compatible inputs and outputs
• Refresh Interval:
-- 2,048 cycles/32 ms
• Refresh Mode: RAS-Only,
CAS-before-RAS (CBR), and Hidden
• Single power supply:
5V±10% or 3.3V ± 10%
• Byte Write and Byte Read operation via two CAS
• Industrial temperature range -40 to 85
• TTL compatible inputs and outputs
• Refresh Interval:
-- 2,048 cycles/32 ms
• Refresh Mode: RAS-Only,
CAS-before-RAS (CBR), and Hidden
• Single power supply:
5V±10% or 3.3V ± 10%
• Byte Write and Byte Read operation via two CAS
• Industrial temperature range -40 to 85
IS41LV8205 Connection Diagram
IS41LV8205
PDF/DataSheet Download
- Datasheet: IS41LV8205
- File Size: 130239 KB
- Manufacturer: ISSI
- Click here to Download
- ·IS41C16100
- ISSI [Integrated Silicon Solution, Inc]
- 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
- 126601 KB
- ·IS41C16100-50K
- ISSI [Integrated Silicon Solution, Inc]
- 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
- 126601 KB
- ·IS41C16100-50KI
- ISSI [Integrated Silicon Solution, Inc]
- 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
- 126601 KB
- ·IS41C16100-50T
- ISSI [Integrated Silicon Solution, Inc]
- 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
- 126601 KB
- ·IS41C16100-50TI
- ISSI [Integrated Silicon Solution, Inc]
- 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
- 126601 KB
- ·IS41C16100-60K
- ISSI [Integrated Silicon Solution, Inc]
- 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
- 126601 KB
- ·IS41C16100-60KI
- ISSI [Integrated Silicon Solution, Inc]
- 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
- 126601 KB
- ·IS41C16100-60T
- ISSI [Integrated Silicon Solution, Inc]
- 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
- 126601 KB
IS41LV8205 Relative Products
IS41LV8200A
The ISSI IS41LV8200A is 2,097,152 x 8-bit high-performance CMOS Dynamic Random Access Memory. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 random accesses within a single row with access cycle time as short...
IS41LV8200
The ISSI IS41C8200 and IS41LV8200 are 2,097,152 x 8-bit highperformance CMOS Dynamic Random Access Memory. These devices offer an accelarated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 random accesses within a single row with access cycle ...
IS41LV4405X
The ISSI 4405x Series is a 4,194,304 x 4-bit high-performance CMOS Dynamic Random Access Memory. The Fast Page Mode allows 2,048 or 4096 random accesses within a single row with access cycle time as short as 20 ns per 4-bit word.These features make the 4405x...
IS41LV4400X
The ISSI 4400 Series is a 4,194,304 x 4-bit high-performance CMOS Dynamic Random Access Memory. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 or 4096 random accesses within a single row with access cycle tim...
IS41LV4100
The ISSI IS41C4100 and IS41LV4100 are 1,048,576 x 4-bit high-performance CMOS Dynamic Random Access Memory. Both products offer accelerated cycle access EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle time as sho...
IS41LV16257B-35T-TR
IC DRAM ASYNC 4MB 40-TSOPII
Hotspot Suppliers Product
EECS0HD104H
Price: 0.4-0.45 USD
5.5V, DIP, Electric Double Layer Capacitor, 100mF, Through Hole, 75.00 Ohm
ISD5008EY
Price: 3.96-4.4 USD
Single-Chip Voice Record/Playback Device, 28-TSOP, ISD5008EY, -0.3V to +7.0V
PIC12F629-I/SN
Price: 0.4-0.5 USD
Wide Operating Voltage Range, 8K x 14 program memory space, 1K x 14
SKKT92/16E
Price: 26.5-27 USD
Thyristor / Diode Modules, 1700V, heat transfer, hard soldered joints, UL recognized
LA4422
Price: 0.5-2 USD
5.8W, AF Power Amplifier, 18 V, 4.5A, High gain, high output, SIP package, Soft clip
AD9048JJ0014
Price: 0.001-5 USD
8-bit, 35 MSPS flash converter, DIP, –0.5 V dc to +7.0V, –1.0 mA to +6.0 mA, 35 MSPS Encode Rate
PMBT2222A
Price: 0.1-1 USD
NPN switching transistor, SOT-23, 40V
MC68HC705J1ACP
Price: 0.01-200 USD
low-cost, high-performance M68HC05 Family, 8-bit microcontroller units (MCUs)
IRFP4227PBF
Price: 0.1-3 USD
HEXFET Power MOSFET, 200V, 65A, TO-247AC, 21mΩ, 330 W, IRFP4227PBF
KXSD9
Price: 1.28-1.6 USD
tri-axis silicon micromachined accelerometer, QFN8, nCS low to select, 2000V, Power up digital acc...
DAC712U
Price: 1-100 USD
16-bit, resolution D/A converter, 28-SOIC, 6μs, 750mW, –1V to +VCC –0.7V
TLE7240SL
Price: 1.55-1.6 USD
eight channel low-side switch, SSOP24, -0.3 to 5.5V, RoHS compliant, 4 input pins
