IXDH20N120D1

IGBT Transistors 20 Amps 1200V

product image

IXDH20N120D1 Picture
SeekIC No. : 00143123 Detail

IXDH20N120D1: IGBT Transistors 20 Amps 1200V

floor Price/Ceiling Price

Part Number:
IXDH20N120D1
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/5/3

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 1200 V
Collector-Emitter Saturation Voltage : 2.4 V Maximum Gate Emitter Voltage : +/- 20 V
Maximum Operating Temperature : + 150 C Package / Case : TO-247-3
Packaging : Tube    

Description

Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector- Emitter Voltage VCEO Max : 1200 V
Package / Case : TO-247-3
Collector-Emitter Saturation Voltage : 2.4 V


Features:

· NPT IGBT technology
· low saturation voltage
· low switching losses
· square RBSOA, no latch up
· high short circuit capability
· positive temperature coefficient for easy paralleling
· MOS input, voltage controlled
· optional ultra fast diode
· International standard package



Application

· AC motor speed control
· DC servo and robot drives
· DC choppers
· Uninteruptible power supplies (UPS)
· Switch-mode and resonant-mode power supplies



Specifications

Symbol Conditions Maximum Ratings
VCES TJ = 25 to 150 1200 v
VCGR TJ = 25 to 150; RGE = 20K 1200 v
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC = 25, 38 A
IC90 TC = 90 25 A
ICM TC = 25°C,tp= 1 ms 50 A
RBSOA VGE= 15 V, TVJ = 125, RG = 47 VCE = 0.8•VCES
Clamped inductive load, L = 30 H
ICM =35
VCEK < VCES
A
TSC
(SCSOA)
VGE = 15 V, VCES = 1200V, TJ = 125°C
RG = 10 Ω non repetitive
10 µs
PC TC = 25IGBT
Diode
200
75
TJ   -55 ... +150
TJM   -55 ... +150
  Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
Md Mounting torque 0.8 - 1.2 Nm
Weight TO-247 6
g



Parameters:

Technical/Catalog InformationIXDH20N120D1
VendorIXYS
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)38A
Vce(on) (Max) @ Vge, Ic3V @ 15V, 20A
Power - Max200W
Mounting TypeThrough Hole
Package / CaseTO-247AD
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXDH20N120D1
IXDH20N120D1



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Crystals and Oscillators
Cable Assemblies
Audio Products
Semiconductor Modules
Resistors
View more