IGBT Transistors 30 Amps 1200V
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| Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 1200 V |
| Collector-Emitter Saturation Voltage : | 2.4 V | Maximum Gate Emitter Voltage : | +/- 20 V |
| Maximum Operating Temperature : | + 150 C | Package / Case : | TO-247-3 |
| Packaging : | Tube |
|
Symbol |
Test Conditions |
Maximum |
Ratings |
|
VCES VCGR |
TJ = 25to 150 TJ = 25 to 150; RGE = 1 M |
1200 1200 |
V V |
|
VGES VGEM |
Continuous Transient |
±20 ±30 |
V V |
|
IC25 IC90 IDM |
TC = 25 TC = 90 TC = 90, tp = 1 ms |
60 38 70 |
A A A |
|
RBSOA |
V = ±15 V, T = 125, R = 47 Clamped inductive load, L = 30 µH |
ICM = 50 VCEK < VCES |
A |
|
tSC (SCSOA) |
VGE = ±15 V, VCE = VCES, TJ = 125 RG = 47, non repetitive |
10 |
µs |
|
PC |
TC = 25 IGBT Diode |
300 135 |
W W |
|
TJ TJM Tstg Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s |
-55 ... +150 150 -55 ... +150 300 |
| |
|
Md |
Mounting torque |
1.1/10 |
Nm/lb.in. |
|
Weight |
6 |
g |
| Technical/Catalog Information | IXDH30N120D1 |
| Vendor | IXYS |
| Category | Discrete Semiconductor Products |
| Input Type | Standard |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Current - Collector (Ic) (Max) | 60A |
| Vce(on) (Max) @ Vge, Ic | 2.9V @ 15V, 30A |
| Power - Max | 300W |
| Mounting Type | Through Hole |
| Package / Case | TO-247AD |
| Packaging | Tube |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IXDH30N120D1 IXDH30N120D1 |