IXDR30N120

Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector- Emitter Voltage VCEO Max : 1200 V
Collector-Emitter Saturation Voltage : 2.4 V
Package / Case : ISOPLUS247-3


Features:

• NPT IGBT technology
- high switching speed
- low switching losses
- square RBSOA, no latch up
- high short circuit capability
- positive temperature coefficient for easy paralleling
- MOS input, voltage controlled
- fast recovery epitaxial diode
· Epoxy meets UL 94V-0
· Isolated and UL registered E153432


Application

• DCB Isolated mounting tab
• Meets TO-247AD package Outline
• Package for clip or spring mounting
• Space savings
• High power density


Parameters:

Technical/Catalog Information	IXDR30N120
Vendor	IXYS
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	50A
Vce(on) (Max) @ Vge, Ic	2.9V @ 15V, 30A
Power - Max	200W
Mounting Type	Through Hole
Package / Case	ISOPLUS247?
Packaging	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXDR30N120 IXDR30N120