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IXFC26N50

MOSFET 23 Amps 500V 0.2 Rds

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SeekIC No. : 00164450 Detail

IXFC26N50: MOSFET 23 Amps 500V 0.2 Rds

IXFC26N50 Data Sheet

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Part Number:
IXFC26N50
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 23 A
Resistance Drain-Source RDS (on) : 0.2 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : ISOPLUS 220LV Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Continuous Drain Current : 23 A
Resistance Drain-Source RDS (on) : 0.2 Ohms
Package / Case : ISOPLUS 220LV


Features:

·Silicon chip on Direct-Copper-Bond substrate
   - High power dissipation
   - Isolated mounting surface
   - 2500V electrical isolation
·Low drain to tab capacitance(<35pF)
·Low RDS (on) HDMOSTM process
·Rugged polysilicon gate cell structure
·Unclamped Inductive Switching (UIS) rated
·Fast intrinsic Rectifier


Application

·DC-DC converters
·Battery chargers
·Switched-mode and resonant-mode power supplies
·DC choppers
·AC motor control


Specifications

Symbol Test Conditions Maximum Ratings
VDSS
VDGR		 TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ		 500
500		 V
V
VGS
VGSM		 Continuous
Transient		 ±20
±30
 V
V
ID25
IDM
IAR
 TC = 25°C                                           26N50
                                                             24N50
TC = 25°C, pulse width limited by TJM 26N50
                                                             24N50
TC = 25°C                                           26N50
                                                            24N50
 23
21
92
84
26
24		 A
A
A
A
A
A

EAR
TC = 25°C 30
mJ
dv/dt IS IDM, di/dt 100 A/µs, VDD VDSS
TJ 150°C, RG = 2 Ω		 5 V/ns
PD TC = 25°C 230 W
TJ
TJM
Tstg		   -55 ... +150
150
-55 ... +150		 °C
°C
°C
TL 1.6 mm (0.062 in.) from case for 10 s 300 °C
VISOL
 50/60 Hz, RMS t = 1 min leads to tab
 2500
 V~
Weight   2 g



Parameters:

Technical/Catalog InformationIXFC26N50
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C23A
Rds On (Max) @ Id, Vgs230 mOhm @ 13A, 10V
Input Capacitance (Ciss) @ Vds 4200pF @ 25V
Power - Max230W
PackagingTube
Gate Charge (Qg) @ Vgs135nC @ 10V
Package / CaseISOPLUS220?
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFC26N50
IXFC26N50



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