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IXFR24N100

MOSFET 1KV 22A

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SeekIC No. : 00158223 Detail

IXFR24N100: MOSFET 1KV 22A

IXFR24N100 Data Sheet

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Part Number:
IXFR24N100
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/29

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 1000 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 22 A
Resistance Drain-Source RDS (on) : 0.39 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : ISOPLUS 247 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 22 A
Drain-Source Breakdown Voltage : 1000 V
Package / Case : ISOPLUS 247
Resistance Drain-Source RDS (on) : 0.39 Ohms


Features:

·Silicon chip on Direct-Copper-Bond substrate
   - High power dissipation
   - Isolated mounting surface
   - 2500V electrical isolation
·Low drain to tab capacitance(<30pF)
·Low RDS (on) HDMOSTM process
·Rugged polysilicon gate cell structure
·Unclamped Inductive Switching (UIS) rated
·Fast intrinsic Rectifier


Application

·DC-DC converters
·Battery chargers
·Switched-mode and resonant-mode power supplies
·DC choppers
·AC motor control




Specifications

VDSS
VDGR
TJ = 25 to 150
TJ = 25 to 150; RGS = 1 M
1000
1000
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
IDM
IAR
TC = 25
TC = 25, Note 1
TC = 25
22
96
24
A
A
A
EAR
EAS
TC = 25
TC = 25
60
3
mJ
J
dv/dt
 IS IDM, di/dt 100 A/s, VDD VDSS
TJ 150, RG = 2
5
V/ns
PD
TC = 25
400
W
TJ
TJM
Tstg
 
-55 ... +150
             150
-55 ... +150


TL
1.6 mm (0.063 in.) from case for 10 s
300
VISOL
50/60 Hz, RMS t = 1 min
250 0
V~
Weight
 
5
g



Parameters:

Technical/Catalog InformationIXFR24N100
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1000V (1kV)
Current - Continuous Drain (Id) @ 25° C22A
Rds On (Max) @ Id, Vgs390 mOhm @ 12A, 10V
Input Capacitance (Ciss) @ Vds 8700pF @ 25V
Power - Max416W
PackagingTube
Gate Charge (Qg) @ Vgs267nC @ 10V
Package / CaseISOPLUS247?
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFR24N100
IXFR24N100



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