Purchase K4S641632F, In-stock K4S641632F From SeekIC.
MFG:SAM D/C:247
Part Number: K4S641632F
MFG: SAM
D/C: 247
Description: The K4S641632F is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 wo...
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K4S641632F
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DataSheet
General Description
K4S641632F General Description
The K4S641632F is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
K4S641632F Maximum Ratings
|
Parameter |
Symbol |
Value |
Unit |
|
Voltage on any pin relative to Vss |
VIN, VOUT |
-1.0 ~ 4.6 |
V |
|
Voltage on VDD supply relative to Vss |
VDD, VDDQ |
-1.0 ~ 4.6 |
V |
|
Storage temperature |
TSTG |
-55 ~ +150 |
°C |
|
Power dissipation |
PD |
1 |
W |
|
Short circuit current |
IOS |
50 |
mA |
K4S641632F Features
• JEDEC standard 3.3V power supply
• LVTTL compatible with multiplexed address
• Four banks operation
• MRS cycle with address key programs
-. CAS latency (2 & 3)
-. Burst length (1, 2, 4, 8 & Full page)
-. Burst type (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system clock
• Burst read single-bit write operation
• DQM for masking
• Auto & self refresh
• 64ms refresh period (4K cycle)
• LVTTL compatible with multiplexed address
• Four banks operation
• MRS cycle with address key programs
-. CAS latency (2 & 3)
-. Burst length (1, 2, 4, 8 & Full page)
-. Burst type (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system clock
• Burst read single-bit write operation
• DQM for masking
• Auto & self refresh
• 64ms refresh period (4K cycle)
K4S641632F Connection Diagram
K4S641632F
PDF/DataSheet Download
- Datasheet: K4S641632F
- File Size: 100968 KB
- Manufacturer: SAMSUNG [Samsung semiconductor]
- Click here to Download
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- 2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL
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- SAMSUNG [Samsung semiconductor]
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- ·K4S160822DT-G/F7
- SAMSUNG [Samsung semiconductor]
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- ·K4S160822DT-G/F8
- SAMSUNG [Samsung semiconductor]
- 2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL
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- ·K4S160822DT-G/FH
- SAMSUNG [Samsung semiconductor]
- 2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL
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- ·K4S160822DT-G/FL
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- ·K4S161622D
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- 512K x 16Bit x 2 Banks Synchronous DRAM
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- SAMSUNG [Samsung semiconductor]
- 512K x 16Bit x 2 Banks Synchronous DRAM
- 1154685 KB
K4S641632F Relative Products
K4S641632E
The K4S641632E is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O ...
K4S641632D
The K4S641632D is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4x 1,048,576 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O ...
K4S641632C
The K4S641632C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system cloc...
K4S640832H-TC(L)75
The K4S640432H / K4S640832H / K4S641632H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 4 bits, / 4 x 2,097,152 words by 8 bits, / 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNGs high performance CMOS t...
K4S640832F
The K4S640832F is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 8 bits,fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O tr...
K4S640832E
The K4S640832E is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 8 bits,fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock ...
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