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KFG1G16Q2M-DEB6

Features: `Device Architecture• Design Technology:............90nm• Supply Voltage:..............1.8V (1.7V ~ 1.95V)• Host Interface:..............16 bit• 5KB Internal BufferRAM:.........1KB BootRAM, 4KB DataRAM• SLC NAND Array:.............(2K+64)B Page Size, (128K+4...

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SeekIC No. : 004385242 Detail

KFG1G16Q2M-DEB6: Features: `Device Architecture• Design Technology:............90nm• Supply Voltage:..............1.8V (1.7V ~ 1.95V)• Host Interface:..............16 bit• 5KB Internal Buffer...

KFG1G16Q2M-DEB6 Data Sheet

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Part Number:
KFG1G16Q2M-DEB6
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Features:

`Device Architecture
• Design Technology:............90nm
• Supply Voltage:..............1.8V (1.7V ~ 1.95V)
• Host Interface:..............16 bit
• 5KB Internal BufferRAM:.........1KB BootRAM, 4KB DataRAM
• SLC NAND Array:.............(2K+64)B Page Size, (128K+4K)B Block Size
`Device Performance
• Host Interface Type:...........Synchronous Burst Read
.......................- Up to 66MHz clock frequency
.......................- Linear Burst 4-, 8-, 16-, 32-words with wrap around
.......................- Continuous 1K word Sequential Burst
.......................Asynchronous Random Read
.......................- 76ns access time
.......................Asynchronous Random Write
• Programmable Burst Read Latency:....Latency 3(up to 40MHz), 4, 5, 6, and 7
• Multiple Sector Read/Write:........Up to 4 sectors using Sector Count Register
• Multiple Reset Modes:...........Cold/Warm/Hot/NAND Flash Core Resets
• Multi Block Erase:.............Up to 64 Blocks
• Low Power Dissipation:..........Typical Power,
.......................- Standby current :
...........................10uA @ Single , 20uA @ DDP, 40uA @ QDP
.......................- Synchronous Burst Read current(66MHz) :
...........................15mA @ Single, 20mA @ DDP/QDP
.......................- Load current : 30mA
....................... -Program current : 25mA
.......................- Erase current : 20mA
.......................- Multi Block Erase current : 20mA
.......................- Endurance : 100K Program/Erase Cycles
.......................- Data Retention : 10 Years
`System Hardware
• Voltage detector generating internal reset signal from Vcc
• Hardware reset input (RP)
• Data Protection Modes
.......................- Write Protection for BootRAM
.......................- Write Protection for NAND Flash Array
.......................- Write Protection during power-up
.......................- Write Protection during power-down
• User-controlled One Time Programmable(OTP) area
• Internal 2bit EDC / 1bit ECC
• Internal Bootloader supports Booting Solution in system
• Handshaking Feature...........- INT pin indicates Ready / Busy
.......................- Polling the interrupt register status bit
• Detailed chip information.........- by ID register
`Packaging
• 1G products................63ball, 10mm x 13mm x max 1.0mmt, 0.8mm ball pitch FBGA
• 2G DDP products............. 63ball, 11mm x 13mm x max 1.2mmt, 0.8mm ball pitch FBGA
• 4G QDP products............. 63ball, 11mm x 13mm x max 1.4mmt, 0.8mm ball pitch FBGA



Specifications

Parameter
SymbolL
Rating
UNIT
Voltage on any pin relative to VSS
Vcc
Vcc
-0.5 to + 2.45
V
All Pins
VIN
-0.5 to + 2.45
Temperature Under Bias
Extended
Tbias
-30 to +125
Storage Temperature
Tstg
-65 to +150
Short Circuit Output Current
IOS
5
mA
Recommended Operating Temperature
TA (Extended Temp.)
-30 to +85



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