L1000-BD

Features: ·Self Bias Architecture·Small Size·3.0 or 5.0 V Operation·20.0 dB Small Signal Gain·2.0 dB Noise Figure·+9.0 dBm P1dB Compression Point·100% On-Wafer RF, DC and Noise Figure Testing·100% Visual Inspection to MIL-STD-883·Method 2010Specifications Supply Voltage (Vd) +7.0 VDC Supp...

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SeekIC No. : 004388696 Detail

L1000-BD: Features: ·Self Bias Architecture·Small Size·3.0 or 5.0 V Operation·20.0 dB Small Signal Gain·2.0 dB Noise Figure·+9.0 dBm P1dB Compression Point·100% On-Wafer RF, DC and Noise Figure Testing·100% V...

floor Price/Ceiling Price

Part Number:
L1000-BD
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Features:

·Self Bias Architecture
·Small Size
·3.0 or 5.0 V Operation
·20.0 dB Small Signal Gain
·2.0 dB Noise Figure
·+9.0 dBm P1dB Compression Point
·100% On-Wafer RF, DC and Noise Figure Testing
·100% Visual Inspection to MIL-STD-883
·Method 2010



Specifications

Supply Voltage (Vd) +7.0 VDC
Supply Current (Id) 70 mA
Input Power (Pin) 12 dBm
Storage Temperature (Tstg) -65 to +165
Operating Temperature (Ta) -55 to MTT Table1
Channel Temperature (Tch) MTT Table1
(1) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life.


Description

Mimix Broadband's three stage 20.0-40.0 GHz GaAs MMIC low noise amplifier has a small signal gain of 20.0 dB with a noise figure of 2.0 dB across the band. This MMIC uses Mimix Broadband's 0.15 m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip L1000-BD has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. L1000-BD is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.

 




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