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L1002

Features: ·Balanced Design·Excellent Input/Output Match·Self-biased Architecture·23.0 dB Small Signal Gain·2.6 dB Noise Figure·100% On-Wafer RF, DC and Noise Figure Testing·100% Visual Inspection to MIL-STD-883 Method 2010Specifications Supply Voltage (Vd) +6.0 VDC Supply Current (Id) 12...

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SeekIC No. : 004388698 Detail

L1002: Features: ·Balanced Design·Excellent Input/Output Match·Self-biased Architecture·23.0 dB Small Signal Gain·2.6 dB Noise Figure·100% On-Wafer RF, DC and Noise Figure Testing·100% Visual Inspection to...

L1002 Data Sheet

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Part Number:
L1002
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·Balanced Design
·Excellent Input/Output Match
·Self-biased Architecture
·23.0 dB Small Signal Gain
·2.6 dB Noise Figure
·100% On-Wafer RF, DC and Noise Figure Testing
·100% Visual Inspection to MIL-STD-883 Method 2010


Specifications

Supply Voltage (Vd) +6.0 VDC
Supply Current (Id) 120 mA
Input Power (Pin) +15.0 dBm
Storage Temperature (Tstg) -65 to +165
Operating Temperature (Ta) -55 to MTTF Table 1
Channel Temperature (Tch) MTTF Table 1

(1) Channel temperature affects a device's MTBF. It is recommended to keep channel temperature as low as possible for maximum life.




Description

Mimix Broadband's three stage balanced 20.0-36.0 GHz GaAs MMIC low noise amplifier has a small signal gain of 23.0 dB with a noise figure of 2.6 dB across the band. This MMIC uses Mimix Broadband's 0.15 m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip L1002 has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. L1002  is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.




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