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MFG:SHARP D/C:05+
Part Number: LH53517
MFG: SHARP
D/C: 05+
Description: The LH53517 is a mask-programmable ROM organized as 65,536 ×8 bits. It is fabricated using silicon-gat...
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LH53517
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DataSheet
General Description
LH53517 General Description
The LH53517 is a mask-programmable ROM organized as 65,536 ×8 bits. It is fabricated using silicon-gate CMOS process technology.
LH53517 Features
` 65,536 words *8 bit organization
` Access time: 150 ns (MAX.)
` Low-power consumption:
Operating: 165 mW (MAX.)
Standby: 550 W (MAX.)
` Static operation
` TTL compatible I/O
` Three-state outputs
` Single +5 V power supply
` Mask-programmable OE/OE
` Packages:
28-pin, 600-mil DIP
28-pin, 450-mil SOP
28-pin, 8 *13.4 mm2 TSOP (Type I)
` Access time: 150 ns (MAX.)
` Low-power consumption:
Operating: 165 mW (MAX.)
Standby: 550 W (MAX.)
` Static operation
` TTL compatible I/O
` Three-state outputs
` Single +5 V power supply
` Mask-programmable OE/OE
` Packages:
28-pin, 600-mil DIP
28-pin, 450-mil SOP
28-pin, 8 *13.4 mm2 TSOP (Type I)
LH53517 Connection Diagram
LH53517
PDF/DataSheet Download
- Datasheet: LH53517
- File Size: 61108 KB
- Manufacturer: SHARP [Sharp Electrionic Components]
- Click here to Download
- ·LH504
- 1455172 KB
- ·LH5116
- SHARP [Sharp Electrionic Components]
- CMOS 16K (2K x 8) Static RAM
- 89302 KB
- ·LH5116-10
- SHARP [Sharp Electrionic Components]
- CMOS 16K (2K x 8) Static RAM
- 89302 KB
- ·LH5116D-10
- SHARP [Sharp Electrionic Components]
- CMOS 16K (2K x 8) Static RAM
- 89302 KB
- ·LH5116H
- MCNIX [Macronix International]
- CMOS 16K (2K x 8) Static RAM
- 89302 KB
- ·LH5116H-10
- SHARP [Sharp Electrionic Components]
- CMOS 16K (2K x 8) Static RAM
- 89302 KB
- ·LH5116HD-10
- SHARP [Sharp Electrionic Components]
- CMOS 16K (2K x 8) Static RAM
- 89302 KB
- ·LH5116HN-10
- SHARP [Sharp Electrionic Components]
- CMOS 16K (2K x 8) Static RAM
- 89302 KB
LH53517 Relative Products
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LH5332600
he LH5332600 is a 32M-bit mask-programmable ROM organized as 4,194,304×8 bits (Byte mode) or 2,097,152×16 bits (Word mode) that can be selected by a BYTE input pin. It is fabricated using silicon-gate CMOS process technology.
LH532600
The LH532600 is a 2M-bit mask-programmable ROM organized as 262,144 ×8 bits (Byte mode) or 131,072×16 bits (Word mode) that can be selected by BYTE input pin. It is fabricated using silicon-gate CMOS process technology.
LH53259
The LH53259 is a mask-programmable ROM organized as 32,768 ×8 bits. It is fabricated using silicon-gate CMOS process technology.
LH5324P00A
The LH5324P00A is a 24M-bit mask-programmable ROM organized as 3,145,728×8 bits (Byte mode) or 1,572,864×16 bits (Word mode) that can be selected by a BYTE input pin. It is fabricated using silicon-gate CMOS process technology.
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