M29F160BT70N1

The M29F160BT70N1 is one member of the M29F0160B family which is designed as the 16 Mbit (2Mb x8, uniform block) single supply flash memory. This device is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. And also it is offered in a TSOP40 (10 x 20mm) and SO44 packages. Access times of 55ns, 70ns and 90ns are available.

Features of the M29F160BT70N1 are:(1)single 5V±10% supply voltage for program, erase and read operations;(2)access time: 55ns;(3)programming time: 8ms by byte typical;(4)temporary block unprotection mode;(5)35 memory blocks:1 boot block (top or bottom location) and 2 parameter and 32 main blocks;(6)unlock bypass program command:faster production/batch programming;(7)low power consumption:standby and automatic standby;(8)100,000 program/ erase cycles per block;(9)20 years data retention:defectivity below 1 ppm/year.

The absolute maximum ratings of the M29F160BT70N1 can be summarized as:(1)temperature under bias:50 to 125 °C;(2)storage temperature:65 to 150 °C;(3)input or output voltage:0.6 to 6 V;(4)supply voltage:0.6 to 6 V;(5)identification voltage:0.6 to 13.5 V. If you want to know more information such as the electrical characteristics about the M29F160BT70N1, please download the datasheet in www.seekic.com or www.chinaicmart.com.