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Part Number: M29W008B

 

 

 

 

Description: The M29W008 is a non-volatile memory that may be erased electrically at the ...


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M29W008B General Description


The M29W008 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The device can also be programmed in standard programmers.

The array matrix organisation allows each block to be erased and reprogrammed without affecting other blocks. Blocks can be protected against programing and erase on programming equipment, and temporarily unprotected to make changes inthe application. Each block can be programmed and erased over 100,000 cycles.

Instructions for Read/Reset, Auto Select for reading the Electronic Signature or Block Protection status, Programming, Block and Chip Erase, Erase Suspend and Resume are written to the device in cycles of commands to a Command Interface using standard microprocessor write timings. The device is offered in TSOP40 (10 x 20mm) package.

M29W008B Maximum Ratings

Symbol
Parameter
Value
Unit
TA
Ambient Operating Temperature (3)
40 to 85
°C
TBIAS
Temperature Under Bias
50 to 125
°C
TSTG
Storage Temperature
65 to 150
°C
VIO(2)
Input or Output Voltage
0.6 to 5
V
VCC
Supply Voltage
0.6 to 5
V
V(A9, E, G, RP)(2)
A9, E, GRP Voltage
0.6 to 13.5
V

M29W008B Connection Diagram

M29W008B  Connection Diagram

M29W008B datasheet

M29W008B
PDF/DataSheet Download

  • Datasheet: M29W008B
  • File Size: 224502 KB
  • Manufacturer: STMICROELECTRONICS [STMicroelectronics]
  • Click here to Download

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