M29W160DT General Description
The M29W160D is a 16 Mbit (2Mb x8 or 1Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM.
The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. Each block can be protected independently to prevent accidental Program or Erase commands from modifying the memory. Program and Erase commands are written to the Command Interface of the memory. An on chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents.
M29W160DT Maximum Ratings
M29W160DT Features
SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS
ACCESS TIME: 70ns
PROGRAMMING TIME
10µs per Byte/Word typical
35 MEMORY BLOCKS
1 Boot Block (Top or Bottom Location)
2 Parameter and 32 Main Blocks
PROGRAM/ERASE CONTROLLER
Embedded Program and Erase algorithms
ERASE SUSPEND and RESUME MODES
Read and Program another Block during Erase Suspend
UNLOCK BYPASS PROGRAM COMMAND
Faster Production/Batch Programming
TEMPORARY BLOCK UNPROTECTION MODE
SECURITY MEMORY BLOCK
LOW POWER CONSUMPTION
Standby and Automatic Standby
100,000 PROGRAM/ERASE CYCLES per BLOCK
ELECTRONIC SIGNATURE
Manufacturer Code: 0020h
Top Device Code M29W160DT: 22C4h
Bottom Device Code M29W160DB: 2249h
M29W160DT Connection Diagram
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