MFG:ST Package Cooled:BGA D/C:02+
MFG: ST
Package Cooled: BGA
D/C: 02+
Description: The M29W800A is a non-volatile memory that may be erased electrically at the block or chip level and p...
The M29W800A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word-by-Word basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The device can also be programmed in standard programmers.
The array matrix organisation allows each block to be erased and reprogrammed without affecting other blocks. Blocks can be protected against programing and erase on programming equipment, and temporarily unprotected to make changes in the application. Each block can be programmed and erased over 100,000 cycles.
Instructions for Read/Reset, Auto Select for reading the Electronic Signature or Block Protection status, Programming, Block and Chip Erase, Erase Suspend and Resume are written to the device in cycles of commands to a Command Interface using standard microprocessor write timings. The device is offered in TSOP48 (12 x 20mm), SO44 and LFBGA48 0.8 mm ball pitch packages.
|
Symbol |
Parameter |
Value |
Unit |
|
TA |
Ambient Operating Temperature (3) |
40 to 85 |
°C |
|
TBIAS |
Temperature Under Bias |
50 to 125 |
°C |
|
TSTG |
Storage Temperature |
65 to 150 |
°C |
|
VIO (2) |
Input or Output Voltage |
0.6 to 5 |
V |
|
VCC |
Supply Voltage |
0.6 to 5 |
V |
|
V(A9, E,G, RP)(2) |
A9, E, G, RP Voltage |
0.6 to 13.5 |
V |
M29W800AT
PDF/DataSheet Download
The M29W800AB is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word-by-Word basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary hig...
Stressing the M29W641DU above the rating listed in the Absolute Maximum Ratings table may cause permanent damage to the device. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. These are stress ratings only a...
Stressing the M29W641DL above the rating listed in the Absolute Maximum Ratings table may cause permanent damage to the device. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. These are stress ratings only a...
Stressing the M29W641DH above the rating listed in the Absolute Maximum Ratings table may cause permanent damage to the device. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. These are stress ratings only a...
IC FLASH 64MB 3V 70NS TB TBGA64
IC FLASH 64MB 3V 70NS TB TFBGA48
Price: 1.03-1.1 USD
TOP Switch-GX, high voltage power MOSFET, PWM control
Price: 221-240 USD
High Efficiency Diode, IGBT, eupec GmbH, 1200V, 900A, 2100W, 1.7 Ω
Price: 0.22-0.314 USD
5-lead SOT-23, current mode, DC/DC converter, –0.4V to 36V, Low Shutdow Current
Price: 0.5-1.5 USD
FET bus switch, TSSOP-20, –0.5 to 7 V, –50 mA, Standard 245-Type Pinout
Price: 1.35-1.85 USD
monolithic DTMF transceiver, SOP-20, 6V, 10mA, 1000 mW, MT8888CS
Price: 0.05-0.1 USD
TAJA475M010RNJ, 4.7μF, TAJ series capacitor
Price: 1.5-3 USD
Video Op Amp, 16-SSOP, 3V
Price: 8-12 USD
MODULE, Memory Cards, Toshiba Semiconductor
Price: 2.3-3.5 USD
true single-chip UHF transceiver, -0.3 to 5.0 V, QFN, Low current consumption
Price: 0.1-100 USD
Capacitor, SMD, 47 μF, 6.3V, AVX Corporation, TAJA476K006RNJ
Price: 1.5-2.7 USD
microcontroller, QFP, -0.3V to +7.5V, 300 mA, Fail-Safe Clock Monitor, nanoWatt Technology
Price: 10-19 USD
embedded processor, 32-bit, 20 or 25 MHz, 3 Volts, 132-pin Plastic Quad Flatpack, 144-pin Thin Qua...
