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M29W800DB45N6E
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Purchase M29W800DB45N6E, In-stock M29W800DB45N6E From SeekIC.

MFG:Numonyx/ST Micro Category:Integrated Circuits (ICs)

M29 Series Datasheet download

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Part Number: M29W800DB45N6E

Category: Integrated Circuits (ICs)

MFG: Numonyx/ST Micro

Descriptions: IC FLASH 8MB 3V 45NS BB 48TSOP

Price Break

1
10
100
250
500
1000
2500

Unit Price

4.99000
4.09600
3.45600
3.07200
2.81600
2.12480
1.92000

Extended Price

4.99
40.96
345.60
768.00
1408.00
2124.80
4800.00

(All prices are in USD) Prices for reference only

M29W800DB45N6E General Description

IC FLASH 8MB 3V 45NS BB 48TSOP

M29W800DB45N6E Parameters

Technical/Catalog Information	M29W800DB45N6E
Vendor	Numonyx/ST Micro
Category	Integrated Circuits (ICs)
Memory Type	FLASH - Nor
Memory Size	8M (1M x 8 or 512K x 16)
Speed	45nS
Interface	Parallel
Package / Case	48-TSOP
Packaging	Tray
Voltage - Supply	2.7 V ~ 3.6 V
Operating Temperature	-40°C ~ 85°C
Format - Memory	FLASH
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	M29W800DB45N6E M29W800DB45N6E

M29W800DB45N6E datasheet

M2901V
PDF/DataSheet Download

Datasheet: M2901V
File Size: 149016 KB
Manufacturer:
Click here to Download

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ETC [ETC]
Mini size of Discrete semiconductor elements
512569 KB
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STMICROELECTRONICS [STMicroelectronics]
EPM 32 ELECTRONIC PROGRAM MEMORY FOR 32 STATIONS
2159674 KB
·M293B1
STMICROELECTRONICS [STMicroelectronics]
EPM 32 ELECTRONIC PROGRAM MEMORY FOR 32 STATIONS
2159674 KB
·M295V002B-120K1TR
STMICROELECTRONICS [STMicroelectronics]
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory
200998 KB
·M295V002B-120K6TR
STMICROELECTRONICS [STMicroelectronics]
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory
200998 KB
·M295V002B-120N1TR
STMICROELECTRONICS [STMicroelectronics]
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory
200998 KB
·M295V002B-120N6TR
STMICROELECTRONICS [STMicroelectronics]
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory
200998 KB
·M295V002B-120P1TR
STMICROELECTRONICS [STMicroelectronics]
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory
200998 KB

Related Part Number

M29W800DB45N6E Relative Products

M29W800DB
The M29W800DB is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be...
M29W800D
Features of the M29W800D are:(1)supply voltage is Vcc=2.7 to 3.6V for program,erase and read;(2)access time is 70ns,90ns;(3)programming time 100s/byte/word typical;(4)19 memory blocks;(5)program/erase controller;(6)erase suspend and resume modes;(7)unlock by...
M29W800B
The M29W800B is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-ByteorWordby- Word basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high vol...
M29W800AT
The M29W800AT is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word-by-Word basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary hig...
M29W800AB
The M29W800AB is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word-by-Word basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary hig...
M29W641DU
Stressing the M29W641DU above the rating listed in the Absolute Maximum Ratings table may cause permanent damage to the device. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. These are stress ratings only a...

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