M29W800DT-70N6E

The M29W800DT-70N6E is designed as one kind of 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory device that is divided into blocks that can be erased independently, so it is possible to preserve valid data while old data is erased. Also this device is available in SO44, TSOP48 (12 x 20mm), TFBGA48 6 x 9mm (0.8mm pitch) and TFBGA48 6 x 8mm (0.8mm pitch) packages.

Features of the M29W800DT-70N6E are:(1)supply voltage is Vcc = 2.7V to 3.6V for program, erase and read;(2)access times: 45, 70, 90 s;(3)programming time - 10s per byte / word typical;(4)19 memory blocks: 1 boot block (top or bottom location) and 2 parameter and 16 main blocks;(5)program / erase controller - embedded byte/word program algorithms;(6)erase suspend and resume modes - read and program another block during erase suspend;(7)unlock bypass program command - faster production/batch programming;(8)temporary block unprotection mode;(9)common flash interface - 64 bit security code;(10)low power consumption - standby and automatic standby.

The absolute maximum ratings of the M29W800DT-70N6E can be summarized as:(1)Temperature Under Bias: -50 to 125 °C;(2)Storage Temperature: -65 to 150 °C;(3)Input or Output Voltage: -0.6 to VCC+0.6 V;(4)Supply Voltage: -0.6 to 4 V;(5)Identification Voltage: -0.6 to 13.5 V. If you want to know more information such as the electrical characteristics about the M29W800DT-70N6E, please download the datasheet in www.seekic.com or www.chinaicmart.com.