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MFG:ST D/C:00+
Part Number: M29W800DT
MFG: ST
D/C: 00+
Description: The M29W800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These ope...
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M29W800DT
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DataSheet
General Description
M29W800DT General Description
The M29W800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM.
The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. Each block can be protected independently to prevent accidental Program or Erase commands from modifying the memory. Program and Erase commands are written to the Command Interface of the memory. An on chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents.
M29W800DT Maximum Ratings
| Symbol | Parameter | Min | Max | Unit |
| TBIAS | Temperature Under Bias | 50 | 125 | °C |
| TSTG | Storage Temperature | 65 | 150 | °C |
| VIO | Input or Output Voltage (1,2) | 0.6 | VCC +0.6 | V |
| VCC | Supply Voltage | 0.6 | 4 | V |
| VID | Identification Voltage | 0.6 | 13.5 | V |
M29W800DT Features
SUPPLY VOLTAGE
VCC = 2.7V to 3.6V for Program, Erase and Read
ACCESS TIME: 70, 90ns
PROGRAMMING TIME
10µs per Byte/Word typical
19 MEMORY BLOCKS
1 Boot Block (Top or Bottom Location)
2 Parameter and 16 Main Blocks
PROGRAM/ERASE CONTROLLER
Embedded Byte/Word Program algorithms
ERASE SUSPEND and RESUME MODES
Read and Program another Block during Erase Suspend
UNLOCK BYPASS PROGRAM COMMAND
Faster Production/Batch Programming
TEMPORARY BLOCK UNPROTECTION MODE
COMMON FLASH INTERFACE
64 bit Security Code
LOW POWER CONSUMPTION
Standby and Automatic Standby
100,000 PROGRAM/ERASE CYCLES per BLOCK
ELECTRONIC SIGNATURE
Manufacturer Code: 0020h
Top Device Code M29W800DT: 22D7h
Bottom Device Code M29W800DB: 225Bh
VCC = 2.7V to 3.6V for Program, Erase and Read
ACCESS TIME: 70, 90ns
PROGRAMMING TIME
10µs per Byte/Word typical
19 MEMORY BLOCKS
1 Boot Block (Top or Bottom Location)
2 Parameter and 16 Main Blocks
PROGRAM/ERASE CONTROLLER
Embedded Byte/Word Program algorithms
ERASE SUSPEND and RESUME MODES
Read and Program another Block during Erase Suspend
UNLOCK BYPASS PROGRAM COMMAND
Faster Production/Batch Programming
TEMPORARY BLOCK UNPROTECTION MODE
COMMON FLASH INTERFACE
64 bit Security Code
LOW POWER CONSUMPTION
Standby and Automatic Standby
100,000 PROGRAM/ERASE CYCLES per BLOCK
ELECTRONIC SIGNATURE
Manufacturer Code: 0020h
Top Device Code M29W800DT: 22D7h
Bottom Device Code M29W800DB: 225Bh
M29W800DT Connection Diagram
M29W800DT
PDF/DataSheet Download
- Datasheet: M29W800DT
- File Size: 230935 KB
- Manufacturer: STMICROELECTRONICS [STMicroelectronics]
- Click here to Download
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