Purchase M5M44800CJ, In-stock M5M44800CJ From SeekIC.
MFG:4 Package Cooled:MIT
Part Number: M5M44800CJ
MFG: 4
Package Cooled: MIT
Description: This is a family of 524288-word by 8-bit dynamic RAMs, fabricated with the high performance CMOS proce...
- Table of contents:
M5M44800CJ
-
Suppliers
DataSheet
General Description
M5M44800CJ General Description
This is a family of 524288-word by 8-bit dynamic RAMs, fabricated with the high performance CMOS process, and is ideal for largecapacity memory systems where high speed, low power dissipation, and low costs are essential.
The use of double-layer metalization process technology and a single-transistor dynamic storage stacked capacitor cell provide high circuit density at reduced costs. Multiplexed address inputs permit both a reduction in pins and an increase in system densities. Self or extended refresh current is low enough for battery back-up application.
M5M44800CJ Maximum Ratings
|
Symbol |
Parameter |
Conditions |
Rating |
Unit |
| Vcc | Supply voltage |
With respect to Vss |
-1to+7 |
V |
| VI | Input voltage |
-1to+7 |
V | |
| Vo | Output voltage |
-1to+7 |
V | |
| Io | Output current |
50 |
mA | |
| Pd | Power dissipation | Ta=25 |
1000 |
mW |
| Topr | Operating temperature |
0to70 |
||
| Tstg | Storage temperature |
-65 to +150 |
M5M44800CJ Features
`Standard 28pin SOJ, 28pin TSOP (II)
`Single 5V±10% supply
`Low stand-by power dissipation
CMOS lnput level........................ 5.5mW (Max)
CMOS Input level........................ 550W (Max) *
`Operating power dissipation
M5M44800Cxx-5,-5S ..................495mW (Max)
M5M44800Cxx-6,-6S ..................413mW (Max)
M5M44800Cxx-7,-7S ..................358mW (Max)
`Self refresh capability *
Self refresh current .......................150A(Max)
`Extended refresh capability
Extended refresh current ..............150A(Max)
`Fast page mode(1024-column random access),Read-modify-write,RAS-only refresh, CAS before RASrefresh, Hidden refresh capabilities.
`Early-write mode, CASand OE to control output buffer impedance
`1024 refresh cycles every 16.4ms (A0 ~A9)
`1024 refresh cycles every 128ms (A0 ~A9) *
* :Applicable to self refresh version (M5M44800CJ,TP-5S,-6S,-7S
:option) only
`Single 5V±10% supply
`Low stand-by power dissipation
CMOS lnput level........................ 5.5mW (Max)
CMOS Input level........................ 550W (Max) *
`Operating power dissipation
M5M44800Cxx-5,-5S ..................495mW (Max)
M5M44800Cxx-6,-6S ..................413mW (Max)
M5M44800Cxx-7,-7S ..................358mW (Max)
`Self refresh capability *
Self refresh current .......................150A(Max)
`Extended refresh capability
Extended refresh current ..............150A(Max)
`Fast page mode(1024-column random access),Read-modify-write,RAS-only refresh, CAS before RASrefresh, Hidden refresh capabilities.
`Early-write mode, CASand OE to control output buffer impedance
`1024 refresh cycles every 16.4ms (A0 ~A9)
`1024 refresh cycles every 128ms (A0 ~A9) *
* :Applicable to self refresh version (M5M44800CJ,TP-5S,-6S,-7S
:option) only
M5M44800CJ Typical Application
Microcomputer memory, Refresh memory for CRT
M5M44800CJ Connection Diagram
M5M44800CJ
PDF/DataSheet Download
- Datasheet: M5M44800CJ
- File Size: 207476 KB
- Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
- Click here to Download
- ·M5M1
- ETC [ETC]
- MEDIUM CURRENT SILICON RECTIFIERS
- 183622 KB
- ·M5M27C202FP-12
- MITSUBISHI [Mitsubishi Electric Semiconductor]
- 2097152-BIT(131072-WORD BY 16-BIT) CMOS ONE TIME REPROGRAMMABLE ROM
- 600293 KB
- ·M5M27C202FP-15
- MITSUBISHI [Mitsubishi Electric Semiconductor]
- 2097152-BIT(131072-WORD BY 16-BIT) CMOS ONE TIME REPROGRAMMABLE ROM
- 600293 KB
- ·M5M27C202J-12
- MITSUBISHI [Mitsubishi Electric Semiconductor]
- 2097152-BIT(131072-WORD BY 16-BIT) CMOS ONE TIME REPROGRAMMABLE ROM
- 600293 KB
- ·M5M27C202J-15
- MITSUBISHI [Mitsubishi Electric Semiconductor]
- 2097152-BIT(131072-WORD BY 16-BIT) CMOS ONE TIME REPROGRAMMABLE ROM
- 600293 KB
- ·M5M27C202JK-10
- MITSUBISHI [Mitsubishi Electric Semiconductor]
- 2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM
- 575919 KB
- ·M5M27C202JK-12
- MITSUBISHI [Mitsubishi Electric Semiconductor]
- 2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM
- 575919 KB
- ·M5M27C202JK-12I
- MITSUBISHI [Mitsubishi Electric Semiconductor]
- 2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM
- 565302 KB
M5M44800CJ Relative Products
M5M44405CJ
M5M44405CJ is a family of 1048576-word by 4-bit dynamic RAMs, fabricated with the high performance CMOS process,and is ideal for largecapacity memory systems where high speed, low power dissipation,and low costs are essential.The use of quadruple-layer polys...
M5M44265CJ
ThisM5M44265CJ is a family of 262144-word by 16-bit dynamic RAMs with Hyper Page mode fuction, fabricated with the high performance CMOS process, and is ideal for the buffer memory systems of personal computer graphics and HDD where high speed, low power dis...
M5M44260CTP
This is a family of 262144-word by 16-bit dynamic RAMs,fabricated with the high performance CMOS process, and is ideal for memory systems where high speed, low power dissipation, and low costs are essential.The use of double-layer metalization process techno...
M5M44260CJ
This is a family of 262144-word by 16-bit dynamic RAMs,fabricated with the high performance CMOS process, and is ideal for memory systems where high speed, low power dissipation, and low costs are essential.The use of double-layer metalization process techno...
M5M417400CTP
This is a family of 4194304-word by 4-bit dynamic RAMS,fabricated with the high performance CMOS process, and is ideal for large-capacity memory systems where high speed, low power dissipation, and low costs are essential.The use of double-layer metal proces...
M5M417400CJ
This is a family of 4194304-word by 4-bit dynamic RAMS,fabricated with the high performance CMOS process, and is ideal for large-capacity memory systems where high speed, low power dissipation, and low costs are essential.The use of double-layer metal proces...
Hotspot Suppliers Product
LM308AN
Price: 0.1-5 USD
operational amplifier, DIP, ±18V, 500 mW, low offset voltage, 300 μA
SIHG20N50C
Price: 0.1-1 USD
Power MOSFET, TO-247, 560V, 0.27Ω, 80A, 250W, High Peak Current Capability
EKMM351VSN181MP40S
Price: 0.01-100 USD
aluminum electrolytic capacitor, KMM series , 180μF, 0.92 Arms
TLC541IDWR
Price: 2.14-2.38 USD
8-bit, analog-to-digital converters, with serial control, 11 inputs, SOP-20, total unadjusted erro...
ATMEGA128L-8AC
Price: 2.38-5 USD
128K, 8MHZ, 64-TQFP, low-power, CMOS, 8-bit microcontroller, QFP, AVR enhanced RISC architecture
AT27C512R
Price: 1.6-3 USD
programmable read-only memory, low-power, high-performance, -2.0V to + 7.0V, 20 mA
15244449
Price: 0.13-0.2 USD
disk_drive_power_connector, 10A, 250V, Vertical, Lead-free, without PCB Locator Peg, PC Tail Length
AM186ED-25VC
Price: 2.5-3.5 USD
16-bit embedded microcontroller, –0.5 V to Vcc +0.5 V, QFP
216U1SCSA32H
Price: 18-24 USD
216U1SCSA32H, BGA, ATI Technologies Inc
FM32256-G
Price: 2.39-2.8 USD
Integrated Processor, FM32256-G, SOP14, Ramtron, -1.0V to +7.0V
ME50120
Price: 1-1000000 USD
Powerex three-phase diode, Bridge module, Isolated Mounting, 1200 Volts, 600 Amperes, Mitsubishi ...
MWIC930NR1
Price: 23-28 USD
RF LDMOS, Wideband Integrated Power Amplifiers, 30W, TO272-16, 900MHZ, 26-28 V
