MFG:MITSUBIS Package Cooled:DIP D/C:N/A
MFG: MITSUBIS
Package Cooled: DIP
D/C: N/A
Description: The M5M51008BP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit whic...
The M5M51008BP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM.
They are low standby current and low operation current and ideal for the battery back-up application.
The M5M51008BVP,RV,KV,KR are packaged in a 32-pin thin small outline package which is a high reliability and high density surface mount device(SMD).Two types of devices are available. VP,KV(normal lead bend type package),RV,KR(reverse lead bend type package). Using both types of devices, it becomes very easy to design a printed circuit board.
|
Symbol |
Parameter |
Conditions |
Ratings |
Unit |
| Vcc |
Supply voltage | With respect to GND |
0.3*~7 |
V |
| VI |
Input voltage |
0.3* ~ Vcc + 0.3 |
V | |
| VO |
Output voltage |
0 ~ Vcc |
V | |
| Pd | Power dissipation | Ta=25°C |
700 |
mW |
| Topr | Operating temperature |
40 ~ 85 |
°C | |
| Tstg | Storage temperature |
65 ~ 150 |
°C |
M5M51008BP-55L
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The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density a...
The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density a...
The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density a...
The M5M4V64S40ATP is a 4-bank x 1048576-word x 16-bit Synchronous DRAM, with LVTTL interface. All inputs and outputs are referenced to the rising edge of CLK. The M5M4V64S40ATP achieves very high speed data rate up to 125MHz, and is suitable for main memory ...
The M5M4V64S40ATP is a 4-bank x 1048576-word x 16-bit Synchronous DRAM, with LVTTL interface. All inputs and outputs are referenced to the rising edge of CLK. The M5M4V64S40ATP achieves very high speed data rate up to 125MHz, and is suitable for main memory ...
The M5M4V64S40ATP is a 4-bank x 1048576-word x 16-bit Synchronous DRAM, with LVTTL interface. All inputs and outputs are referenced to the rising edge of CLK. The M5M4V64S40ATP achieves very high speed data rate up to 125MHz, and is suitable for main memory ...
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