M5M51008RV

The M5M51008RV is a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which is fabricated utilizing high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. It is low standby current and low operation current and ideal for the batt ery back-up application.

Features of M5M51008RV are: (1)single+5V power supply; (2)low stand-by current 0.3A (typ.); (3)directly TTL comp atible : all inputs and outputs; (4)easy memory expansion and power down by S1,S2; (5)data hold on+2V power su pply; (6)three-state outputs: OR -tie capability; (7)oe prevents data contention in the I/O bus; (8)common data I/O.

The absolute maximum ratings and electrical characteristics of the M5M51008RV can be summarized as: (1)supply vo ltage(with respect to GND):-0.3V to 7V; (2)input voltage(with respect to GND):-0.3V to Vcc+0.3V; (3)output voltage(with respect to GND): 0V to Vcc; (4)power dissipation(Ta=25°C): 700mW; (5)operating temperature:-40°C to 85°C; (6)storage temperature:-65°C to 150°C. Electrical characteristics: (1)high level input voltage: 2.2V min and Vcc +0.3V max; (2)low level input voltage:-0.3V min and 0.8V max; (3)high level output voltage(IOH=-0.5mA): 2.4V min; (4)low level output voltage(IOL=2mA): 0.4V max; (5)input current(VI=0~Vcc):±1uA, etc.