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MFG:MITSUBIS D/C:08+


Part Number: M5M5256DFP
MFG: MITSUBIS
D/C: 08+
Description: The M5M5256DFP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabr...
MFG:MITSUBIS D/C:08+


MFG: MITSUBIS
D/C: 08+
Description: The M5M5256DFP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabr...
The M5M5256DFP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by current is small enough for battery back-up application. It is ideal for the memory systems which require simple interface.
Especially the M5M5256DVP,RV are packaged in a 28-pin thin small outline package.Two types of devices are available,M5M5256DVP(normal lead bend type package),M5M5256DRV(reverse lead bend type package). Using both types of devices, it becomes very easy to design a printed circuit board.
| Symbol | Parameter | Conditions | Ratings | Unit |
|
VCC |
Supply voltage |
With respect to GND | 0.3* ~ 4.6 | V |
| VI |
Input voltage |
0.3* ~ Vcc + 0.3 (Max 4.6) |
V | |
| VO |
Output voltage |
0 ~ Vcc | V | |
|
Pd |
Power dissipation | Ta=25 |
700 |
mW |
| Topr |
operating temperature |
40 ~ 85 | ||
|
Tstg |
Storage Temperature |
65 ~ 150 |
|
M5M5256DFP
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