M5M54R04J

Features:

Fast access time                M5M54R04J-12 **** 12ns(max)
                                            M5M54R04J-15  **** 15ns(max)
Low power dissipation     Active  ********** 450mW(typ)
                                           Stand by  ********** 5mW(typ)
Single +5V power supply
  Fully static operation : No clocks, No refresh
Common data I/O
 Easy memory expansion by S
Three-state outputs : OR-tie capability
OE prevents data contention in the I/O bus
Directly TTL compatible : All inputs and outputs


Application

High-speed memory units


Pinout




Specifications

Symbol	Parameter	Conditions	Ratings	Unit
Vcc	Supply voltage	With respect to GND	-3.5*~ 7	V
VI	Input voltage		-3.5*~ VCC+0.3	V
VO	Output voltage		-3.5*~ VCC+0.3	V
Pd	Power dissipation	Ta=25	1000	mW
Topr	Operating temperature		0 ~ 70
Tstg(bias)	Storage temperature(bias)		-10 ~ 85
Tstg	Storage temperature		-65 ~ 150

Description

The M5M54R04J is a family of 1048576-word by 4-bit static RAMs, fabricated with the high performance CMOS silicon gate process and designed for high speed application. 

The M5M54R04J is offered in a 32-pin plastic small outline J-lead package(SOJ).

These device operate on a single 5V supply, and are directly  TTL compatible. They include a power down feature as well.