MJ11022

Series: -
Resistor - Base (R1) (Ohms): -
Resistor - Emitter Base (R2) (Ohms): -
Frequency - Transition: -
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Voltage - Collector Emitter Breakdown (Max): 250V
Manufacturer: ON Semiconductor
Current - Collector Cutoff (Max): 1mA
Current - Collector (Ic) (Max): 15A
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-3
Packaging: Tray
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 10A, 5V
Power - Max: 175W
Vce Saturation (Max) @ Ib, Ic: 3.4V @ 150mA, 15A


Application

• High dc Current Gain @ 10 Adc - hFE = 400 Min (All Types)
• CollectorEmitter Sustaining Voltage VCEO(sus) = 150 Vdc (Min) MJ11018, 17 VCEO(sus) = 250 Vdc (Min) MJ11022, 21
• Low CollectorEmitter Saturation VCE(sat) = 1.0 V (Typ) @ IC = 5.0 A VCE(sat) = 1.8 V (Typ) @ IC = 10 A
• Monolithic Construction
• 100% SOA Tested @ VCE = 44 V, IC = 4.0 A, t = 250 ms.

Pinout

Rating	Symbol	MJ15023	MJ15025	Unit
CollectorEmitter Voltage	VCEO	150	250	Vdc
Collector Base Voltage	VCB	150	250	Vdc
EmitterBase Voltage	VEB	50		Vdc
Collector Current - Continuous Peak	IC	15 30		vdc
Base Current	IB	0.5		Adc
Total Power Dissipation @ TC = 25 B@ TC = 100 Derate above 25	PD	175 1.16		Watts W/
Operating and Storage Junction Temperature Range	TJ, Tstg	65 to +175 65 to +200

Parameters:

Technical/Catalog Information	MJ11022
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN - Darlington
Voltage - Collector Emitter Breakdown (Max)	250V
Current - Collector (Ic) (Max)	15A
Power - Max	175W
DC Current Gain (hFE) (Min) @ Ic, Vce	400 @ 10A, 5V
Vce Saturation (Max) @ Ib, Ic	2V @ 100mA, 10A
Frequency - Transition	3MHz
Current - Collector Cutoff (Max)	1mA
Mounting Type	Chassis Mount
Package / Case	TO-204, TO-3
Packaging	Tray
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	MJ11022 MJ11022