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MFG:STMicroelectronics (VA) Category:Discrete Semiconductor Products

Five Points

Category: Discrete Semiconductor Products

MFG: STMicroelectronics (VA)

Descriptions: TRANS DARL NPN 100V 2A DPAK

Price Break

1
10
100
250
500
1000

Unit Price

.68000
.52500
.45000
.42000
.37500
.30000

Extended Price

0.68
5.25
45.00
105.00
187.50
300.00

(All prices are in USD) Prices for reference only

TRANS DARL NPN 100V 2A DPAK

Technical/Catalog Information	MJD112T4
Vendor	STMicroelectronics (VA)
Category	Discrete Semiconductor Products
Transistor Type	NPN - Darlington
Voltage - Collector Emitter Breakdown (Max)	100V
Current - Collector (Ic) (Max)	2A
Power - Max	20W
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 2A, 3V
Vce Saturation (Max) @ Ib, Ic	2V @ 8mA, 2A
Frequency - Transition	-
Current - Collector Cutoff (Max)	20A
Mounting Type	Surface Mount
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
Packaging	Digi-Reel?
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MJD112T4 MJD112T4 497 2462 6 ND 49724626ND 497-2462-6

MJD112T4
PDF/DataSheet Download

·MJD112
ONSEMI [ON Semiconductor]
Complementary Darlington Power Transistors
52676 KB
·MJD112/L
KEC
EPITAXIAL PLANAR NPN TRANSISTOR
32768 KB
·MJD112-001
ONSEMI [ON Semiconductor]
Complementary Darlington Power Transistors
151292 KB
·MJD1121
MOTOROLA [Motorola, Inc]
SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS
313845 KB
·MJD112L
KEC [KEC(Korea Electronics)]
EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)
404075 KB
·MJD112RL
ONSEMI [ON Semiconductor]
Complementary Darlington Power Transistors
151292 KB
·MJD112T4G
ONSEMI [ON Semiconductor]
Complementary Darlington Power Transistors
151292 KB
·MJD117
ONSEMI [ON Semiconductor]
Complementary Darlington Power Transistors
404229 KB

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