Transistors Darlington 2A 100V Bipolar Power NPN
MJD112T4G: Transistors Darlington 2A 100V Bipolar Power NPN
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| Configuration : | Single | Transistor Polarity : | NPN | ||
| Collector- Emitter Voltage VCEO Max : | 100 V | Emitter- Base Voltage VEBO : | 5 V | ||
| Collector- Base Voltage VCBO : | 100 V | Maximum DC Collector Current : | 4 A | ||
| Maximum Collector Cut-off Current : | 20 uA | Power Dissipation : | 20 W | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | DPAK | Packaging : | Reel |
| Technical/Catalog Information | MJD112T4G |
| Vendor | ON Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Transistor Type | NPN - Darlington |
| Voltage - Collector Emitter Breakdown (Max) | 100V |
| Current - Collector (Ic) (Max) | 2A |
| Power - Max | 20W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 2A, 3V |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 8mA, 2A |
| Frequency - Transition | 25MHz |
| Current - Collector Cutoff (Max) | 20A |
| Mounting Type | Surface Mount |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| Packaging | Digi-Reel? |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | MJD112T4G MJD112T4G MJD112T4GOSDKR ND MJD112T4GOSDKRND MJD112T4GOSDKR |