Transistors Bipolar (BJT) PNP Si Transistor Darlington
MJD117ITU: Transistors Bipolar (BJT) PNP Si Transistor Darlington
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| Transistor Polarity : | PNP | Collector- Emitter Voltage VCEO Max : | 100 V |
| Emitter- Base Voltage VEBO : | 5 V | DC Collector/Base Gain hfe Min : | 500 at 0.5 A at 3 V |
| Configuration : | Single | Maximum Operating Temperature : | + 150 C |
| Mounting Style : | Through Hole | Package / Case : | IPAK |
| Packaging : | Tube |