Purchase MJD31C, In-stock MJD31C From SeekIC.
- Table of contents:
MJD31C
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Suppliers
DataSheet
General Description
MJD31C Maximum Ratings
| SYMBOL | PARAMETER | RATING | UNIT |
| VCBO | Collector to base voltage MJD31,MJD32 MJD31C,MJD32C |
40 100 |
V |
| VCE | Collector to emitter voltage MJD31,MJD32 MJD31C,MJD32C |
40 100 |
V |
| VEB | Emitter to base voltage | 5 | V |
| IC | Collector current | 3 | A |
| ICP | Collector current (pulse) | 5 | A |
| IB | base current | 1 | A |
| PD | Total Device Dissipation FR-5 Board @TA = 25 Derate above 25 |
15 0.12 |
W W/ |
| PD | Total Device Dissipation Alumina Substrate @TA = 25 Derate above 25 |
1.56 0.012 |
W W/ |
| Tstg | Storage temperature | -65 to +150 | |
| Tj | Junction temperature | 150 | |
| RèJC | Thermal Resistance, Junction-to-Case | 8.3 | W/ |
| RèJA | Thermal Resistance, Junction-to-Ambient | 80 | W/ |
| TL | Lead Temperature for Soldering Purposes | 260 |
MJD31C Features
·Lead Formed for Surface Mount Applications in Plastic Sleeves
·Pb-Free Packages are Available
·Pb-Free Packages are Available
MJD31C
PDF/DataSheet Download
- Datasheet: MJD31C
- File Size: 210742 KB
- Manufacturer: STMICROELECTRONICS [STMicroelectronics]
- Click here to Download
- ·MJD112
- ONSEMI [ON Semiconductor]
- Complementary Darlington Power Transistors
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- ·MJD112/L
- KEC
- EPITAXIAL PLANAR NPN TRANSISTOR
- 32768 KB
- ·MJD112-001
- ONSEMI [ON Semiconductor]
- Complementary Darlington Power Transistors
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- ·MJD1121
- MOTOROLA [Motorola, Inc]
- SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS
- 313845 KB
- ·MJD112L
- KEC [KEC(Korea Electronics)]
- EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)
- 404075 KB
- ·MJD112RL
- ONSEMI [ON Semiconductor]
- Complementary Darlington Power Transistors
- 151292 KB
- ·MJD112T4
- ONSEMI [ON Semiconductor]
- Complementary Darlington Power Transistors
- 313845 KB
- ·MJD112T4G
- ONSEMI [ON Semiconductor]
- Complementary Darlington Power Transistors
- 151292 KB
MJD31C Relative Products
MJD31B/31C
The MJD31B and MJD31C and the MJD32B and MJD32C form complementary NPN-PNP pairs.They are manufactured using Epitaxial Base technology for cost-effective performance.
MJD31/31C
MJD31,C
MJD31
MJD3055TF
TRANSISTOR NPN 60V 10A DPAK
MJD3055T4G
TRANS PWR NPN 10A 60V DPAK
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