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MFG:ON Semiconductor (VA) Category:Discrete Semiconductor Products

Five Points

Category: Discrete Semiconductor Products

MFG: ON Semiconductor (VA)

Descriptions: TRANS PWR NPN 3A 100V DPAK

Price Break

1
10
100
250
500
1000

Unit Price

.62000
.52200
.40990
.36020
.33534
.26082

Extended Price

0.62
5.22
40.99
90.05
167.67
260.82

(All prices are in USD) Prices for reference only

TRANS PWR NPN 3A 100V DPAK

Technical/Catalog Information	MJD31CT4G
Vendor	ON Semiconductor (VA)
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	100V
Current - Collector (Ic) (Max)	3A
Power - Max	15W
DC Current Gain (hFE) (Min) @ Ic, Vce	10 @ 3A, 4V
Vce Saturation (Max) @ Ib, Ic	1.2V @ 375mA, 3A
Frequency - Transition	3MHz
Current - Collector Cutoff (Max)	50A
Mounting Type	Surface Mount
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
Packaging	Digi-Reel?
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MJD31CT4G MJD31CT4G MJD31CT4GOSDKR ND MJD31CT4GOSDKRND MJD31CT4GOSDKR

MJD112
PDF/DataSheet Download

·MJD112/L
KEC
EPITAXIAL PLANAR NPN TRANSISTOR
32768 KB
·MJD112-001
ONSEMI [ON Semiconductor]
Complementary Darlington Power Transistors
151292 KB
·MJD1121
MOTOROLA [Motorola, Inc]
SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS
313845 KB
·MJD112L
KEC [KEC(Korea Electronics)]
EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)
404075 KB
·MJD112RL
ONSEMI [ON Semiconductor]
Complementary Darlington Power Transistors
151292 KB
·MJD112T4
ONSEMI [ON Semiconductor]
Complementary Darlington Power Transistors
313845 KB
·MJD112T4G
ONSEMI [ON Semiconductor]
Complementary Darlington Power Transistors
151292 KB
·MJD117
ONSEMI [ON Semiconductor]
Complementary Darlington Power Transistors
404229 KB

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