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Part Number: MJD32B/32C

 

 

 

 

Description: The MJD31B and MJD31C and the MJD32B and MJD32C form complementary NPN-PNP pairs.They are manufactured using Epitax...


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MJD32B/32C General Description


The MJD31B and MJD31C and the MJD32B and MJD32C form complementary NPN-PNP pairs.
They are manufactured using Epitaxial Base technology for cost-effective performance.

MJD32B/32C Maximum Ratings

Symbol
Parameter
 
Value
Unit
PNP
MJD31B
MJD31C
NPN
MJD32B
MJD32C
VCBO
Collector-Base Voltage (IE = 0)

80

100
V
VCEO
Collector-Emitter Voltage (IB = 0)
80
100
V
VEBO
Emitter-Base Voltage (IC = 0)
5
V
IC
Collector Current
3
A
ICM
Collector Peak Current
5
A
IB
Base Current
1
A
Ptot
Total Dissipation at Tc = 25
15
W
Tstg
Storage Temperature
-65 to 150
TJ
Max. Operating Junction Temperature
150

For PNP types voltage and current values are negative.

MJD32B/32C Features

`STMicroelectronics PREFERRED SALESTYPES
`SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4")
`ELECTRICALLY SIMILAR TO TIP31B/C AND TIP32B/C

MJD32B/32C Typical Application

·GENERAL PURPOSE SWITCHING AND AMPLIFIER TRANSISTORS

MJD32B/32C datasheet

MJD112
PDF/DataSheet Download

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