Transistor Polarity
: N-Channel
Mounting Style
: SMD/SMT
Packaging
: Reel
Maximum Operating Temperature
: + 150 C
Gate-Source Breakdown Voltage
: +/- 30 V
Drain-Source Breakdown Voltage
: 60 V
Package / Case
: SOT-223
Configuration
: Single Dual Drain
Continuous Drain Current
: 0.3 A
Resistance Drain-Source RDS (on)
: 1700 mOhms
Features: · Silicon Gate for Fast Switching Speeds
· Low Drive Requirement
· The SOT-C223 Package can be soldered using wave or reflow The formed leads absorb thermal stress during soldering eliminating the possibility of damage to the die.
Pinout
Specifications
|
Rating |
Symbol |
Value |
Unit |
| Drain-to-Source Volta |
VDSS |
60 |
Volts |
| Gate-to-Source Voltage - Non -Repeti |
VGS |
±30 |
Volts |
| Drain Current |
ID |
300 |
mAdc |
Total Power Dissipation @ TA = 25
(Note 1.)
Derate above 25 |
PD |
0.8
0.4 |
Watts
mW/ |
Operating and Storage Temperature
Range |
TJ ,Tstg |
-65 to 150 |
|
DescriptionThis MMFT960T1 Power MOSFET is designed for high speed, low loss power switching applications such as switching regulators, dc-Cdc converters solenoid and relay drivers. The device is housed in the SOT-C22 package which is designed for medium power surface mount applications.
Parameters: | Technical/Catalog Information | MMFT960T1 |
| Vendor | ON Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 300mA |
| Rds On (Max) @ Id, Vgs | 1.7 Ohm @ 1A, 10V |
| Input Capacitance (Ciss) @ Vds | 65pF @ 25V |
| Power - Max | 800mW |
| Packaging | Digi-Reel? |
| Gate Charge (Qg) @ Vgs | 3.2nC @ 10V |
| Package / Case | SOT-223, SC-73, TO-261 (3 Leads + Tab) |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | MMFT960T1
MMFT960T1
MMFT960T1OSDKR ND
MMFT960T1OSDKRND
MMFT960T1OSDKR
|
MMFT960T1 Data Sheet
