MT5C2565

Voltage on Any Pin Relative to Vss..................................-0.5V to +7V
Voltage on Vcc Supply Relative to Vss.............................-0.5V to +7V
Storage Temperature................................................-65oC to +150
Power Dissipation..........................................................................1W
Short Circuit Output Current......................................................50mA
Lead Temperature (soldering 10 seconds)..............................+260
Junction Temperature..............................................................+175
*Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods
may affect reliability.

The Austin Semiconductor SRAM family MT5C2565 employs high-speed, low-power CMOS designs using a four-transistor memory cell. Austin Semiconductor SRAMs are fabricated using double-layer metal, double-layer polysilicon technology.

For flexibility in high-speed memory applications, Austin Semiconductor MT5C2565 offers chip enable (CE\) and output enable (OE\) capability. These enhancements can place the outputs in High-Z for additional flexibility in system design. Writing to these devices is accomplished when write enable (WE\) and CE\ inputs are both LOW. Reading is accomplished when WE\ remains HIGH and CE\ and OE\ go LOW. The MT5C2565 offers a reduced power standby mode when disabled. This allows system designs to achieve low standby power requirements.

The "L" version of MT5C2565 provides an approximate 50 percent reduction in CMOS standby current (ISBC2) over the standard version.

MT5C2565 operate from a single +5V power supply and all inputs and outputs are fully TTL compatible.