MFG:ON Package Cooled:TO-220 D/C:06+
MFG: ON
Package Cooled: TO-220
D/C: 06+
Description: This advanced high voltage TMOS EFET is designed to withstand high energy in the avalanche mode and sw...
This advanced high voltage TMOS EFET is designed to withstand high energy in the avalanche mode and switch efficiently.This new high energy device also offers a draintosource diode with fast recovery time. Designed for high voltage, high speed switching applications in power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
• Avalanche Energy Capability Specified at Elevated Temperature
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Low Stored Gate Charge for Efficient Switching
• Internal SourcetoDrain Diode Designed to Replace External Zener Transient SuppressorAbsorbs High Energy in the Avalanche Mode
• ESD Protected. Designed to Typically Withstand 400 V Machine Model and 4000 V Human Body Model.
|
Rating |
Symbol |
Value |
Unit |
| DrainSource Voltage |
VDSS |
60 |
Vdc |
| DrainGate Voltage (RGS = 1.0 M) |
VDGR |
60 |
Vdc |
| GateSource Voltage - Continuous - NonRepetitive (tp10ms) |
VGS VGSM |
±20 ±40 |
|
| Drain - Continuous @ 25°C - Continuous @ 100°C - Single Pulse(tp10 s) |
ID ID IDM |
55 35.5 165 |
Adc Apk |
| Total Power Dissipation Derate above 25°C |
PD |
113 0.91 |
Watts W/°C |
| Operating and Storage Temperature Range |
TJ,Tstg |
55 to 150 |
°C |
| Single DraintoSource Avalanche Energy - Starting TJ = 25°C (VDD = 25 Vdc, VDS = 60 Vdc, VGS = 10 Vdc, Peak IL = 55 Apk, L = 0.3 mH, RG = 25) |
EAS |
454 |
mJ |
| Thermal Resistance - Junction to Case - Junction to Ambient |
RJC RJA |
1.1 62.5 |
°C/W |
| Maximum Lead Temperature for Soldering Purposes, 1/8" from case for 10 seconds |
TL |
260 |
°C |
MTP55N06Z
PDF/DataSheet Download
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