MTP6P20E

Series: -
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Type: MOSFET P-Channel, Metal Oxide
FET Feature: Standard
Current - Continuous Drain (Id) @ 25° C: 6A
Vgs(th) (Max) @ Id: 4V @ 250µA
Drain to Source Voltage (Vdss): 200V
Gate Charge (Qg) @ Vgs: 30nC @ 10V
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Power - Max: 75W
Input Capacitance (Ciss) @ Vds: 750pF @ 25V
Manufacturer: ON Semiconductor
Rds On (Max) @ Id, Vgs: 1 Ohm @ 3A, 10V


Features:

• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• I_DSS and V_DS(on) Specified at Elevated Temperature


Specifications

Rating	Symbol	Value	Unit
DraintoSource Voltage	VDSS	200	Vdc
DraintoGate Voltage (RGS = 1.0 M)	VDGR	200	Vdc
GatetoSource Voltage - Continuous - NonRepetitive (tp 10 ms)	VGS VGSM	±20 ± 40	Vdc Vpk
Drain Current - Continuous - Continuous @ 100°C - Single Pulse (tp 10 s)	ID ID IDM	6.0 3.9 21	Adc Apk
Total Power Dissipation@ Derate above 25°C	PD	75 0.6	Watts W/°C
Operating and Storage Temperature Range	TJ, Tstg	55 to 175	°C
Single Pulse DraintoSource Avalanche Energy TJ = 25°C (VDD =25Vdc,VGS = 10Vdc, Vdc IL =6.0Apk, L = 10mH, RG = 25)	EAS	180	mJ
Thermal Resistance - Junction to Case - Junction to Ambient	RJC RJA	1.67 62.5	°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds	TL	260	°C

Designer's Data for "Worst Case" Conditions - The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves - representing boundaries on device characteristics - are given to facilitate "worst case" design.
EFET and Designer's are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.


Description

The MTP6P20E is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, the MTP6P20E is particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.


Parameters:

Technical/Catalog Information	MTP6P20E
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	6A
Rds On (Max) @ Id, Vgs	1 Ohm @ 3A, 10V
Input Capacitance (Ciss) @ Vds	750pF @ 25V
Power - Max	75W
Packaging	Tube
Gate Charge (Qg) @ Vgs	30nC @ 10V
Package / Case	TO-220-3 (Straight Leads)
FET Feature	Standard
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	MTP6P20E MTP6P20E MTP6P20EOS ND MTP6P20EOSND MTP6P20EOS