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Part Number: NDB6050
Description: These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprie...
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NDB6050
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DataSheet
General Description
NDB6050 General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
NDB6050 Maximum Ratings
| Symbol | Parameter | NDP6050 | NDB6050 |
Units |
| VDSS | Drain-Source Voltage |
50 |
V | |
| VDGR | Drain-Gate Voltage (RGS 1 M) |
50 |
V | |
| VGSS | Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 s) |
± 20 |
V | |
|
± 40 | ||||
| ID | Drain Current - Continuous - Pulsed |
48 |
A | |
|
144 | ||||
| PD | Total Power Dissipation @ TC = 25°C Derate above 25°C |
100 |
W | |
|
0.67 |
W/ | |||
| TJ,TSTG | Operating and Storage Temperature Range |
-65 to 175 |
||
| TL | Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds |
275 |
||
NDB6050 Features
`48A, 50V. RDS(ON) = 0.025 @ VGS=10V.
`Critical DC electrical parameters specified at elevated temperature.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`175°C maximum junction temperature rating.
`High density cell design for extremely low RDS(ON).
`TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
NDB6050
PDF/DataSheet Download
- Datasheet: NDB6050
- File Size: 68075 KB
- Manufacturer: FAIRCHILD [Fairchild Semiconductor]
- Click here to Download
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