MFG:LM Package Cooled:TO-263 D/C:09+
MFG: LM
Package Cooled: TO-263
D/C: 09+
Description: These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprie...
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
| Symbol | Parameter | NDP6060 | NDB6060 |
Units |
| VDSS | Drain-Source Voltage |
60 |
V | |
| VDGR | Drain-Gate Voltage (RGS 1 M) |
60 |
V | |
| VGSS | Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 s) |
± 20 |
V | |
|
± 40 | ||||
| ID | Drain Current - Continuous Tc=25oC - Continuous TC=100oC - Pulsed |
48 |
A | |
|
32 | ||||
|
144 | ||||
| PD | Total Power Dissipation @ TC = 25°C Derate above 25°C |
100 |
W | |
|
0.67 |
W/ | |||
| TJ,TSTG | Operating and Storage Temperature Range |
-65 to 175 |
||
| TL | Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds |
275 |
||
`48A, 60V. RDS(ON) = 0.025 @ VGS=10V.
`Critical DC electrical parameters specified at elevated temperature.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`175°C maximum junction temperature rating.
`High density cell design for extremely low RDS(ON).
`TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
NDB6060
PDF/DataSheet Download
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