Transistor Polarity
: N-Channel
Gate-Source Breakdown Voltage
: +/- 20 V
Mounting Style
: SMD/SMT
Packaging
: Reel
Drain-Source Breakdown Voltage
: 30 V
Maximum Operating Temperature
: + 150 C
Continuous Drain Current
: 5.5 A
Package / Case
: SOT-223
Configuration
: Single Dual Drain
Resistance Drain-Source RDS (on)
: 0.05 Ohms
Features: `5.5A, 30V. RDS(ON) = 0.05 @ VGS = 10V.
`High density cell design for extremely low RDS(ON).
`High power and current handling capability in a widely used surface mount package.Pinout
Specifications
| Symbol |
Parameter |
NDT451N |
Units |
| VDSS |
Drain-Source Voltage |
30 |
V |
| VGSS |
Gate-Source Voltage - Continuous |
±20 |
V |
| ID |
Drain Current - Continuous (Note 1a)
- Pulsed |
±5.5 |
A |
| ±25 |
| PD |
Maximum Power Dissipation (Note 1a)
(Note 1b)
(Note 1c) |
3 |
W |
| 1.3 |
| 1.1 |
| TJ,TSTG |
Operating and Storage Temperature Range |
-65 to 150 |
|
| THERMAL CHARACTERISTICS |
| RJA |
Thermal Resistance, Junction-to-Ambient (Note 1a) |
42 |
/W |
| RJC |
Thermal Resistance, Junction-to-Case (Note 1) |
12 |
/W |
| * Order option J23Z for cropped center drain lead. |
DescriptionPower SOT N-Channel enhancement mode power field effect transistors NDT451N are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. NDT451N is particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.
Parameters: | Technical/Catalog Information | NDT451N |
| Vendor | Fairchild Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 5.5A |
| Rds On (Max) @ Id, Vgs | 50 mOhm @ 5.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 730pF @ 10V |
| Power - Max | 1.1W |
| Packaging | Cut Tape (CT) |
| Gate Charge (Qg) @ Vgs | 25nC @ 10V |
| Package / Case | SOT-223-4 |
| FET Feature | Logic Level Gate |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | NDT451N
NDT451N
NDT451NCT ND
NDT451NCTND
NDT451NCT
|
NDT451N Data Sheet
