NDT452P

MOSFET DISC BY MFG 2/02

product image

NDT452P Picture
SeekIC No. : 00165235 Detail

NDT452P: MOSFET DISC BY MFG 2/02

floor Price/Ceiling Price

Part Number:
NDT452P
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/24

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 3 A
Resistance Drain-Source RDS (on) : 0.18 Ohms Configuration : Single Dual Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-223 Packaging : Reel    

Description

Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : - 30 V
Package / Case : SOT-223
Resistance Drain-Source RDS (on) : 0.18 Ohms
Continuous Drain Current : 3 A
Configuration : Single Dual Drain


Features:

`-3A, -30V. RDS(ON) = 0.18 @ VGS = -10V.
`High density cell design for extremely low RDS(ON).
`High power and current handling capability in a widely used surface mount package.



Pinout

  Connection Diagram   Connection Diagram


Specifications

Symbol Parameter NDT452P Units
VDSS Drain-Source Voltage -30 V
VGSS Gate-Source Voltage - Continuous ±20 V
ID Drain Current - Continuous (Note 1a)
- Pulsed
±3 A
±20
PD Maximum Power Dissipation (Note 1a)
(Note 1b)
(Note 1c)
3 W
1.3
1.1
TJ,TSTG Operating and Storage Temperature Range -65 to 150
THERMAL CHARACTERISTICS
RJA Thermal Resistance, Junction-to-Ambient (Note 1a) 42 /W
RJC Thermal Resistance, Junction-to-Case (Note 1) 12 /W
* Order option J23Z for cropped center drain lead.



Description

Power SOT P-Channel enhancement mode power field effect transistors NDT452P are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. NDT452P is particularly suited for low voltage applications such as notebook computer power management and DC motor control.




Parameters:

Technical/Catalog InformationNDT452P
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C3A
Rds On (Max) @ Id, Vgs180 mOhm @ 3A, 10V
Input Capacitance (Ciss) @ Vds 525pF @ 10V
Power - Max1.1W
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs25nC @ 10V
Package / CaseSOT-223-4
FET FeatureLogic Level Gate
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names NDT452P
NDT452P
NDT452PDKR ND
NDT452PDKRND
NDT452PDKR



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Undefined Category
Line Protection, Backups
Programmers, Development Systems
Transformers
Isolators
View more