NDT454P

MOSFET P-Channel FET Enhancement Mode

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SeekIC No. : 00146980 Detail

NDT454P: MOSFET P-Channel FET Enhancement Mode

floor Price/Ceiling Price

US $ .42~.68 / Piece | Get Latest Price
Part Number:
NDT454P
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • 100~250
  • Unit Price
  • $.68
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  • Processing time
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Upload time: 2024/4/25

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 5.9 A
Resistance Drain-Source RDS (on) : 0.038 Ohms Configuration : Single Dual Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-223 Packaging : Reel    

Description

Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : - 30 V
Package / Case : SOT-223
Configuration : Single Dual Drain
Resistance Drain-Source RDS (on) : 0.038 Ohms
Continuous Drain Current : 5.9 A


Features:

`-5.9A, -30V. RDS(ON) = 0.05 @ VGS = -10V
                        RDS(ON) = 0.07 @ VGS = -6V
                      RDS(ON) = 0.09 @ VGS = -4.5V.
`High density cell design for extremely low RDS(ON).
`High power and current handling capability in a widely used surface mount package.



Pinout

  Connection Diagram   Connection Diagram


Specifications

Symbol Parameter NDT454P Units
VDSS Drain-Source Voltage -30 V
VGSS Gate-Source Voltage - Continuous ±20 V
ID Drain Current - Continuous (Note 1a)
- Pulsed
±5.9 A
±15
PD Maximum Power Dissipation (Note 1a)
(Note 1b)
(Note 1c)
3 W
1.3
1.1
TJ,TSTG Operating and Storage Temperature Range -65 to 150
THERMAL CHARACTERISTICS
RJA Thermal Resistance, Junction-to-Ambient (Note 1a) 42 /W
RJC Thermal Resistance, Junction-to-Case (Note 1) 12 /W
* Order option J23Z for cropped center drain lead.



Description

Power SOT P-Channel enhancement mode power field effect transistors NDT454P are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. NDT454P is particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.




Parameters:

Technical/Catalog InformationNDT454P
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C5.9A
Rds On (Max) @ Id, Vgs50 mOhm @ 5.9A, 10V
Input Capacitance (Ciss) @ Vds 950pF @ 15V
Power - Max1.1W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs40nC @ 10V
Package / CaseSOT-223, SC-73, TO-261 (3 Leads + Tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NDT454P
NDT454P



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