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NE651R479A-EVPW19

Transistors RF GaAs For NE651R479A-A Power at 1.9 GHz

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SeekIC No. : 00219255 Detail

NE651R479A-EVPW19: Transistors RF GaAs For NE651R479A-A Power at 1.9 GHz

NE651R479A-EVPW19 Data Sheet

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Part Number:
NE651R479A-EVPW19
Mfg:
CEL
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/18

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Product Details

Quick Details

Technology Type : HEMT Frequency : 1.9 GHz
Gain : 12 dB Drain Source Voltage VDS : 8 V
Gate-Source Breakdown Voltage : - 4 V Continuous Drain Current : 1 A
Maximum Operating Temperature : + 125 C Power Dissipation : 2.5 W
Mounting Style : SMD/SMT Package / Case : 79A    

Description

Noise Figure :
Forward Transconductance gFS (Max / Min) :
Mounting Style : SMD/SMT
Technology Type : HEMT
Gain : 12 dB
Maximum Operating Temperature : + 125 C
Continuous Drain Current : 1 A
Frequency : 1.9 GHz
Drain Source Voltage VDS : 8 V
Gate-Source Breakdown Voltage : - 4 V
Power Dissipation : 2.5 W
Package / Case : 79A


Parameters:

Technical/Catalog InformationNE651R479A-EVPW19
VendorNEC
CategoryRF and RFID
TypeFET
Supplied ContentsBoard
For Use With/Related ProductsNE651R479A@1.9GHz
Frequency1.9GHz
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names NE651R479A EVPW19
NE651R479AEVPW19



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