NE85633-T1B Selling Leads, Price trend, NE85633-T1B DataSheet download, circuit diagram from SeekIC.com

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NE85633-T1B: TRANS NPN 1GHZ SOT-23

NE85633-T1B Data Sheet

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Part Number:: NE85633-T1B
Mfg:
Supply Ability:: 5000

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1~5000

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Negotiable

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Upload time: 2025/12/5

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Product Details

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Series:	-	Manufacturer:	CEL
Transistor Type:	NPN	Typical Resistor Ratio :	1 at NPN, 4.7 at PNP
Voltage - Collector Emitter Breakdown (Max):	12V	Frequency - Transition:	7GHz
Noise Figure (dB Typ @ f):	1.4dB ~ 2dB @ 1GHz	Gain:	9dB
Power - Max:	200mW	DC Current Gain (hFE) (Min) @ Ic, Vce:	50 @ 20mA, 10V
Current - Collector (Ic) (Max):	100mA	Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3	Supplier Device Package:	SOT-23

Description

Series: -
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Power - Max: 200mW
Voltage - Collector Emitter Breakdown (Max): 12V
Supplier Device Package: SOT-23
Manufacturer: CEL
Current - Collector (Ic) (Max): 100mA
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 1GHz
Gain: 9dB
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
Packaging: Cut Tape (CT)

Parameters:

Technical/Catalog Information	NE85633-T1B
Vendor	NEC
Category	Discrete Semiconductor Products
Frequency - Transition	7GHz
Noise Figure (dB Typ @ f)	1.4dB ~ 2dB @ 1GHz
Current - Collector (Ic) (Max)	100mA
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 20mA, 10V
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	12V
Gain	9dB
Power - Max	200mW
Compression Point (P1dB)	-
Package / Case	SOT-23
Packaging	Tape & Reel (TR)
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	NE85633 T1B NE85633T1B NE85633TR ND NE85633TRND NE85633TR

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NE85633-T1B

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